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2N6044AS PDF预览

2N6044AS

更新时间: 2023-07-15 00:00:00
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 418K
描述
TRANSISTOR 8 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

2N6044AS 数据手册

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1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
P
(pk)  
θ
θ
(t) = r(t) θ  
JC  
JC  
JC  
= 1.67°C/W  
0.1  
0.07  
0.05  
0.05  
0.02  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t  
t
1
1
t
2
T
– T = P (t)  
C
θ
J(pk)  
(pk) JC  
0.03  
0.02  
0.01  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.01  
0.01  
0.02 0.03 0.05  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
10  
20 30  
50  
100  
200 300 500  
1000  
t, TIME OR PULSE WIDTH (ms)  
Figure 4. Thermal Response  
20  
10  
100 µs  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
5.0  
down. Safe operating area curves indicate I – V  
limits of  
500 µs  
1.0 ms  
5.0 ms  
C
CE  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
2.0  
1.0  
0.5  
dc  
T = 150°C  
J
BONDING WIRE LIMITED  
THERMALLY LIMITED @ T = 25°C  
(SINGLE PULSE)  
SECOND BREAKDOWN LIMITED  
The data of Figure 5 is based on T  
J(pk)  
= 150 C; T is  
C
C
variable depending on conditions. Second breakdown pulse  
limits are valid for duty cycles to 10% provided T  
0.2  
0.1  
J(pk)  
may be calculated from the data in Figure 4.  
CURVES APPLY BELOW RATED V  
CEO  
< 150 C. T  
J(pk)  
2N6040, 2N6043  
2N6041, 2N6044  
2N6045  
At high case temperatures, thermal limitations will reduce the  
power that can be handled to values less than the limitations  
imposed by second breakdown.  
0.05  
0.02  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Active–Region Safe Operating Area  
300  
10,000  
5000  
T = 25°C  
J
3000  
2000  
200  
1000  
C
ob  
500  
T
= 25°C  
= 4.0 Vdc  
= 3.0 Adc  
C
100  
70  
300  
200  
V
CE  
C
I
C
ib  
100  
50  
30  
20  
50  
PNP  
NPN  
PNP  
NPN  
30  
10  
0.1  
0.2  
0.5 1.0 2.0  
5.0 10  
20  
50 100  
1.0  
2.0  
5.0 10  
20  
50 100 200  
500 1000  
V , REVERSE VOLTAGE (VOLTS)  
R
f, FREQUENCY (kHz)  
Figure 7. Capacitance  
Figure 6. Small–Signal Current Gain  
3–91  
Motorola Bipolar Power Transistor Device Data  

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