*ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
V
Vdc
CEO(sus)
(I = 100 mAdc, I = 0)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
60
80
100
—
—
—
C
B
Collector Cutoff Current
I
µA
µA
CEO
(V
CE
(V
CE
(V
CE
= 60 Vdc, I = 0)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
—
—
—
20
20
20
B
= 80 Vdc, I = 0)
B
= 100 Vdc, I = 0)
B
Collector Cutoff Current
I
CEX
(V
CE
(V
CE
(V
CE
(V
CE
(V
CE
(V
CE
= 60 Vdc, V
= 80 Vdc, V
= 100 Vdc, V
= 60 Vdc, V
= 80 Vdc, V
= 100 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc)
= 1.5 Vdc, T = 150 C)
= 1.5 Vdc, T = 150 C)
C
= 1.5 Vdc, T = 150 C)
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
—
—
—
—
—
—
20
20
20
200
200
200
BE(off)
BE(off)
BE(off)
BE(off)
BE(off)
BE(off)
C
C
Collector Cutoff Current
I
µA
CBO
(V
CB
(V
CB
(V
CB
= 60 Vdc, I = 0)
E
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
—
—
—
20
20
20
= 80 Vdc, I = 0)
E
= 100 Vdc, I = 0)
E
Emitter Cutoff Current (V
= 5.0 Vdc, I = 0)
I
EBO
—
2.0
mAdc
—
BE
C
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 4.0 Adc, V
= 4.0 Vdc)
= 4.0 Vdc)
= 4.0 Vdc)
2N6040, 41, 2N6043, 44
2N6042, 2N6045
All Types
1000
1000
100
20.000
20,000
—
C
CE
CE
CE
(I = 3.0 Adc, V
C
(I = 8.0 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 4.0 Adc, I = 16 mAdc)
V
Vdc
CE(sat)
BE(sat)
2N6040, 41, 2N6043, 44
2N6042, 2N6045
All Types
—
—
—
2.0
2.0
4.0
C
B
(I = 3.0 Adc, I = 12 mAdc)
C
C
B
B
(I = 8.0 Adc, I = 80 Adc)
Base–Emitter Saturation Voltage (I = 8.0 Adc, I = 80 mAdc)
V
—
—
4.5
2.8
Vdc
Vdc
C
B
Base–Emitter On Voltage (I = 4.0 Adc, V
C
= 4.0 Vdc)
V
BE(on)
CE
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (I = 3.0 Adc, V
C
= 4.0 Vdc, f = 1.0 MHz)
|h
fe
|
4.0
—
CE
Output Capacitance
2N6040/2N6042
2N6043/2N6045
C
—
—
300
200
pF
—
ob
(V
CB
= 10 Vdc, I = 0, f = 0.1 MHz)
E
Small–Signal Current Gain (I = 3.0 Adc, V
C
= 4.0 Vdc, f = 1.0 kHz)
h
300
—
CE
fe
* Indicates JEDEC Registered Data.
5.0
t
s
3.0
2.0
V
CC
–30 V
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B
C
D MUST BE FAST RECOVERY TYPE, eg:
1
t
f
1N5825 USED ABOVE I ≈ 100 mA
B
1.0
R
C
SCOPE
MSD6100 USED BELOW I ≈ 100 mA
B
0.7
0.5
TUT
V
approx
+8.0 V
2
R
B
0.3
0.2
t
r
D
V
= 30 V
1
≈ 8.0 k
CC
51
≈ 120
0
I /I = 250
C B
= I
I
V
1
approx
–12 V
B1 B2
T = 25°C
+4.0 V
0.1
0.07
0.05
J
PNP
NPN
25 µs
t @ V
BE(off)
= 0 V
2.0 3.0
d
for t and t , D is disconnected
and V = 0
For NPN test circuit reverse all polarities and D1.
d
r
1
2
t , t ≤ 10 ns
r f
DUTY CYCLE = 1.0%
0.1
0.2 0.3
0.5 0.7 1.0
5.0 7.0 10
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Equivalent Circuit
3–90
Figure 3. Switching Times
Motorola Bipolar Power Transistor Device Data