Datasheet > 2N6044AJ

2N6044AJ

更新时间： 2024-02-26 01:38:53

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
61页	418K
描述
8A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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技术参数
数据手册

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2N6044AJ 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.83	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A	集电极-发射极最大电压：	80 V
配置：	DARLINGTON	最小直流电流增益 (hFE)：	1000
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
功耗环境最大值：	75 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4 MHz

2N6044AJ 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 4.0 Adc

Collector–Emitter Sustaining Voltage — @ 100 mAdc —

•

= 60 Vdc (Min) — 2N6040, 2N6043

= 80 Vdc (Min) — 2N6041, 2N6044

= 100 Vdc (Min) — 2N6042, 2N6045

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 4.0 Adc — 2N6040,41, 2N6043,44

CE(sat)

= 2.0 Vdc (Max) @ I = 3.0 Adc — 2N6042, 2N6045

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

*Motorola Preferred Device

MAXIMUM RATINGS (1)

2N6040 2N6041 2N6042

2N6043 2N6044 2N6045

DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80–100 VOLTS

75 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

8.0

Base Current

120

mAdc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.60

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.2

0.0175

Watts

W/ C

Operating and Storage Junction,

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(1) Indicates JEDEC Registered Data.

1.67

CASE 221A–06

TO–220AB

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

3–89

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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