Datasheet > 2N5638-D26Z

2N5638-D26Z

更新时间： 2024-02-24 03:19:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	26K
描述
Transistor

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技术参数
数据手册

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2N5638-D26Z 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
FET 技术：	JUNCTION	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

2N5638-D26Z 数据手册

2N5638

N-Channel Switch

•

This device is designed for low level analog switchng, sample and hold

circuits and chopper stabilized amplifiers.

•

Sourced from process 51.

TO-92

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings * ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-30

°C

T , T

Operating and Storage Junction Temperature Range

-55 ~ +150

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Off Characteristics

Gate-Source Breakdown Voltage

Gate Reverse Current

= 0, I = -10µA

-30

(BR)GSS

GSS

= -15V, V = 0

-1.0

1.0

Drain Cutoff Leakage Current

= 12V, V = 15V

D(off)

On Characteristics

Zero-Gate Voltage Drain Current *

Drain-Source On Resistance

= 20V, I = 0

DSS

= 0V, I = 1.0mA

Ω

DS(on)

Small Signal Characteristics

Drain-Source On Resistance

Input Capacitance

= V = 0, f = 1.0kHz

Ω

ds(on)

= 0, V = 12V, f = 1.0MHz

iss

rss

Reverse Transfer Capacitance

= 0V, V = 12V, f = 1.0MHz

4.0

Switching Characteristics

Trun On Delay Time

Rise Time

= 10V, V = 0

GS(on)

4.0

5.0

d(on)

= -12, I

= 12mA

GS(off)

D(on)

= 50Ω

Trun Off Delay Time

d(off)

Fall Time

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

Units

mW/°C

Total Device Dissipation

Derate above 25°C

350

2.8

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

125

357

°C/W

θJC

θJA

°C/W

Rev. A1, November 2002

12 3

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