Datasheet > 2N5485-L99Z

2N5485-L99Z

更新时间： 2024-02-07 16:11:22

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
14页	754K
描述
Transistor

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技术参数
数据手册

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2N5485-L99Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	FET 技术：	JUNCTION
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.31 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2N5485-L99Z 数据手册

MMBF5484

MMBF5485

MMBF5486

2N5484

2N5485

2N5486

TO-92

SOT-23

Mark: 6B / 6M / 6H

NOTE: Source & Drain

are interchangeable

N-Channel RF Amplifier

This device is designed primarily for electronic switching

applications such as low On Resistance analog switching.

Sourced from Process 50.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

- 25

V_GS

Gate-Source Voltage

I_GF

Forward Gate Current

Operating and Storage Junction Temperature Range

-55 to +150

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5484-5486

*MMBF5484-5486

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

225

1.8

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...14

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