Datasheet > 2N5461RL

2N5461RL

更新时间： 2023-01-03 05:48:42

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	154K
描述
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

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2N5461RL 数据手册

ON Semiconductort

2 DRAIN

2N5460

2N5461

2N5462

JFET Amplifiers

P–Channel — Depletion

GATE

1 SOURCE

MAXIMUM RATINGS

Rating

Drain–Gate Voltage

Symbol

Value

Unit

Vdc

Reverse Gate–Source Voltage

Forward Gate Current

GSR

G(f)

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Junction Temperature Range

Storage Channel Temperature Range

–65 to +135

–65 to +150

°C

stg

CASE 29–11, STYLE 7

TO–92 (TO–226AA)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Gate–Source Breakdown Voltage

—

Vdc

(BR)GSS

(I = 10 µAdc, V = 0)

2N5460, 2N5461, 2N5462

Gate Reverse Current

(V = 20 Vdc, V = 0)

GSS

2N5460, 2N5461, 2N5462

—

5.0

1.0

nAdc

(V = 30 Vdc, V = 0)

(V = 20 Vdc, V = 0, T = 100°C)

µAdc

(V = 30 Vdc, V = 0, T = 100°C)

Gate–Source Cutoff Voltage

(V = 15 Vdc, I = 1.0 µAdc)

2N5460

2N5461

2N5462

0.75

1.0

1.8

—

6.0

7.5

9.0

Vdc

GS(off)

Gate–Source Voltage

(V = 15 Vdc, I = 0.1 mAdc)

2N5460

2N5461

2N5462

0.5

0.8

1.5

—

4.0

4.5

6.0

(V = 15 Vdc, I = 0.2 mAdc)

(V = 15 Vdc, I = 0.4 mAdc)

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 2

2N5460/D

12 3 4

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