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2N5301-TO-72 PDF预览

2N5301-TO-72

更新时间: 2024-02-21 03:43:16
品牌 Logo 应用领域
MICROSS 放大器晶体管
页数 文件大小 规格书
1页 283K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72, 3 PIN

2N5301-TO-72 技术参数

生命周期:Active零件包装代码:TO-72
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliant风险等级:5.67
其他特性:LOW NOISE配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):1.5 pF
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N5301-TO-72 数据手册

  
2N5301  
N-CHANNEL JFET  
Linear Systems replaces discontinued LF5301 and PF5301  
The 2N5301 is a very High Input Impedance N-Channel JFET amplifier  
FEATURES  
The 2N5301 N-channel JFET is designed to provide  
DIRECT REPLACEMENT FOR LF5301 & PF5301  
HIGH INPUT IMPENDANCE  
HIGH GAIN  
performance amplification at low frequencies and with  
low noise.  
IG = 0.100 pA  
gfs = 70 µS  
2N5301 Benefits:  
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted)  
ƒ
Insignificant Signal Loss/Error Voltage  
with High-Impedance Source  
Maximum Signal Output, Low Noise  
High Sensitivity to Low-Level Signals  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
65°C to +175°C  
65°C to +150°C  
ƒ
ƒ
300mW  
50mA  
30V  
2N5301 Applications:  
Gate Current (Note 1)  
MAXIMUM VOLTAGES  
Gate to Drain or Gate to Source  
ƒ
ƒ
ƒ
ƒ
High-Impedance Transducer  
Smoke Detector Input  
Infrared Detector Amplifier  
Precision Test Equipment  
2N5301 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
IGSS  
IG  
IDSS  
CHARACTERISTIC  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate Leakage Current  
MIN  
30  
0.6  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
0.04  
‐‐  
MAX  
‐‐  
3.0  
1  
UNITS  
V
V
CONDITIONS  
VDS = 0V, ID = 1µA  
VDS = 10V, ID = 1nA  
VDG = 0V, VGS = 15V  
VDG = 6V, ID = 5µA  
VDS = 10V, VGS = 0V  
pA  
Gate Operating Current  
‐‐  
‐‐  
Gate to Source Saturation Current  
Forward Transconductance  
Input Capacitance  
30  
70  
‐‐  
500  
300  
3
µA  
µS  
pF  
gfs  
Ciss  
‐‐  
‐‐  
VDS = 10V, VGS = 0V, f = 1kHz  
VDS = 10V, VGS = 0V, f = 1MHz  
Crss  
en  
Reverse Transfer Capacitance  
‐‐  
‐‐  
‐‐  
45  
1.5  
150  
Click To Buy  
Equivalent Input Noise Voltage  
nV/Hz  
VDG = 10V, ID = 50µA , f = 100Hz  
NOTES  
1 . Absolute maximum ratings are limiting values above which 2N5301 serviceability may be impaired.  
Micross Components Europe  
Available Packages:  
TO-72 (Bottom View)  
2N5301 in TO-72  
2N5301 in bare die.  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed  
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise  
under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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