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2N4053 PDF预览

2N4053

更新时间: 2024-01-27 08:46:42
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
20页 1041K
描述
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 60A I(C) | TO-36

2N4053 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.6
最大集电极电流 (IC):60 A配置:Single
最小直流电流增益 (hFE):80最高工作温度:125 °C
极性/信道类型:PNP最大功率耗散 (Abs):170 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):0.002 MHzBase Number Matches:1

2N4053 数据手册

 浏览型号2N4053的Datasheet PDF文件第1页浏览型号2N4053的Datasheet PDF文件第2页浏览型号2N4053的Datasheet PDF文件第3页浏览型号2N4053的Datasheet PDF文件第5页浏览型号2N4053的Datasheet PDF文件第6页浏览型号2N4053的Datasheet PDF文件第7页 
CY7C1339  
sponding address location in the RAM core. If GW is HIGH,  
then the write operation is controlled by BWE and BW  
sig-  
Introduction  
[3:0]  
nals. The CY7C1339 provides byte write capability that is de-  
scribed in the Write Cycle Descriptions table. Asserting the  
Byte Write Enable input (BWE) with the selected Byte Write  
Functional Overview  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock. Max-  
imum access delay from the clock rise (t ) is 3.5 ns (166-MHz  
device).  
(BW  
) input will selectively write to only the desired bytes.  
[3:0]  
Bytes not selected during a byte write operation will remain  
unaltered. A synchronous self-timed write mechanism has  
been provided to simplify the write operations.  
CO  
Because the CY7C1339 is a common I/O device, the Output  
Enable (OE) must be deserted HIGH before presenting data  
The CY7C1339 supports secondary cache in systems utilizing  
either a linear or interleaved burst sequence. The interleaved  
burst order supports Pentium and i486 processors. The linear  
burst sequence is suited for processors that utilize a linear  
burst sequence. The burst order is user selectable, and is de-  
termined by sampling the MODE input. Accesses can be initi-  
ated with either the Processor Address Strobe (ADSP) or the  
Controller Address Strobe (ADSC). Address advancement  
through the burst sequence is controlled by the ADV input. A  
two-bit on-chip wraparound burst counter captures the first ad-  
dress in a burst sequence and automatically increments the  
address for the rest of the burst access.  
to the DQ  
inputs. Doing so will three-state the output driv-  
[31:0]  
ers. As a safety precaution, DQ  
are automatically  
[31:0]  
three-stated whenever a write cycle is detected, regardless of  
the state of OE.  
Single Write Accesses Initiated by ADSC  
ADSC write accesses are initiated when the following condi-  
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is  
deserted HIGH, (3) CE , CE , CE are all asserted active, and  
1
2
3
(4) the appropriate combination of the write inputs (GW, BWE,  
and BW ) are asserted active to conduct a write to the de-  
[3:0]  
Byte write operations are qualified with the Byte Write Enable  
sired byte(s). ADSC- triggered write accesses require a single  
(BWE) and Byte Write Select (BW  
) inputs. A Global Write  
[3:0]  
clock cycle to complete. The address presented to A is  
[16:0]  
Enable (GW) overrides all byte write inputs and writes data to  
all four bytes. All writes are simplified with on-chip synchro-  
nous self-timed write circuitry.  
loaded into the address register and the address advancement  
logic while being delivered to the RAM core. The ADV input is  
ignored during this cycle. If a global write is conducted, the  
Three synchronous Chip Selects (CE , CE , CE ) and an  
data presented to the DQ  
is written into the corresponding  
1
2
3
[31:0]  
asynchronous Output Enable (OE) provide for easy bank se-  
address location in the RAM core. If a byte write is conducted,  
only the selected bytes are written. Bytes not selected during  
a byte write operation will remain unaltered. A synchronous  
self-timed write mechanism has been provided to simplify the  
write operations.  
lection and output three-state control. ADSP is ignored if CE  
is HIGH.  
1
Single Read Accesses  
This access is initiated when the following conditions are sat-  
isfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)  
Because the CY7C1339 is a common I/O device, the Output  
Enable (OE) must be deserted HIGH before presenting data  
CE , CE , CE are all asserted active, and (3) the write signals  
1
2
3
to the DQ  
inputs. Doing so will three-state the output driv-  
[31:0]  
(GW, BWE) are all deserted HIGH. ADSP is ignored if CE is  
1
ers. As a safety precaution, DQ  
are automatically  
[31:0]  
HIGH. The address presented to the address inputs (A  
) is  
[16:0]  
three-stated whenever a write cycle is detected, regardless of  
the state of OE.  
stored into the address advancement logic and the Address  
Register while being presented to the memory core. The cor-  
responding data is allowed to propagate to the input of the  
Output Registers. At the rising edge of the next clock the data  
is allowed to propagate through the output register and onto  
the data bus within 3.5 ns (166-MHz device) if OE is active  
LOW. The only exception occurs when the SRAM is emerging  
from a deselected state to a selected state, its outputs are  
always three-stated during the first cycle of the access. After  
the first cycle of the access, the outputs are controlled by the  
OE signal. Consecutive single read cycles are supported.  
Once the SRAM is deselected at clock rise by the chip select  
and either ADSP or ADSC signals, its output will three-state  
immediately.  
Burst Sequences  
The CY7C1339 provides a two-bit wraparound counter, fed by  
A
, that implements either an interleaved or linear burst se-  
[1:0]  
quence. The interleaved burst sequence is designed specifi-  
cally to support Intel Pentium applications. The linear burst  
sequence is designed to support processors that follow a lin-  
ear burst sequence. The burst sequence is user selectable  
through the MODE input.  
Asserting ADV LOW at clock rise will automatically increment  
the burst counter to the next address in the burst sequence.  
Both read and write burst operations are supported.  
Single Write Accesses Initiated by ADSP  
Interleaved Burst Sequence  
This access is initiated when both of the following conditions  
are satisfied at clock rise: (1) ADSP is asserted LOW, and (2)  
First  
Address  
Second  
Address  
Third  
Address  
Fourth  
Address  
CE , CE , CE are all asserted active. The address presented  
1
2
3
A
A
A
A
[1:0]  
to A  
is loaded into the address register and the address  
[1:0]  
[1:0]  
[1:0]  
[16:0]  
advancement logic while being delivered to the RAM core. The  
00  
01  
10  
11  
01  
00  
11  
10  
10  
11  
00  
01  
11  
10  
01  
00  
write signals (GW, BWE, and BW  
nored during this first cycle.  
) and ADV inputs are ig-  
[3:0]  
ADSP-triggered write accesses require two clock cycles to  
complete. If GW is asserted LOW on the second clock rise, the  
data presented to the DQ  
inputs is written into the corre-  
[31:0]  
4
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