Datasheet > 2N3903_07

2N3903_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
11页	343K
描述
General Purpose Transistors NPN Silicon

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2N3903_07 数据手册

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEX

Collector-Emitter Breakdown Voltage* I_C= 1.0 mA, I_B= 0

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_C= 10 µA, I_E= 0

6.0

I_E= 10 µA, I_C= 0

V_CE= 30 V, V_OB= 3.0 V

I_BL

Base Cutoff Current

ON CHARACTERISTICS*

h_FE

DC Current Gain

V_CE= 1.0 V, I_C= 0.1 mA

V_CE= 1.0 V, I_C= 1.0 mA

V_CE= 1.0 V, I_C= 10 mA

V_CE= 1.0 V, I_C= 50 mA

V_CE= 1.0 V, I_C= 100 mA

I_C= 10 mA, I_B= 1.0 mA

I_C= 50 mA, I_B= 5.0 mA

I_C= 10 mA, I_B= 1.0 mA

I_C= 50 mA, I_B= 5.0 mA

150

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

0.2

0.3

0.85

0.95

V_CE(

)

sat

0.65

V_BE(sat)

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

V_CB= 5.0 V, f = 100 kHz

V_EB= 0.5 V, f = 100 kHz

4.0

8.0

C_ob

C_ib

h_fe

Input Capacitance

Small-Signal Current Gain

I_C= 10 mA, V_CE= 20 V,

f = 100 MHz

2.5

Small-Signal Current Gain

Input Impedance

V_CE= 10 V, I_C= 1.0 mA

1.0

0.1

1.0

200

8.0

5.0

h_fe

f = 1.0 kHz

kΩ

h_re

x 10^-4

µmhos

Voltage Feedback Ratio

Output Admittance

Noise Figure

h_oe

6.0

V_CE= 5.0 V, I_C= 100 µA,

R_S= 1.0 kΩ,

B_W= 10 Hz to 15.7 kHz

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

V_CC= 3.0 V, I_C= 10 mA,

t_d

t_r

I_B1= 1.0 mA , V_{ob ( off )}= 0.5 V

V_CC= 3.0 V, I_C= 10 mA

I_B1= I_B2= 1.0 mA

175

t_s

t_f

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

123 4 5 6 7...11

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