Datasheet > 2N3227_12

2N3227_12

更新时间： 2022-04-19 21:07:31

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	68K
描述
SILICON ANNULAR TRANSISTORS

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数据手册

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2N3227_12 数据手册

NPN 2N3227

SILICON ANNULAR TRANSISTORS

The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed switching

applications.

They are mounted in Jedec TO-18 metal.

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

500

V_CBO

V_CEO

V_EBO

V_CES

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector-Emitter Voltage

Collector Current

I_{C (peak)}

Total Device Dissipation

Ambient Temperature

Derating Factore Above

Total Device Dissipation

Case Temperature

Derating Factore Above

Junction Temperature

Storage Temperature range

0.36

2.06

1.2

Watts

mW/°C

Watts

mW/°C

°C

P_D

@ T_C= 25°

6.85

+200

-65 to +200

T_J

T_Stg

16/10/2012

COMSET SEMICONDUCTORS

1/3

12 3

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