Datasheet > 2N3227

2N3227

更新时间： 2024-01-02 01:59:07

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
2页	112K
描述
SILICON ANNULAR TRANSISTORS

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技术参数
数据手册

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2N3227 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

2N3227 数据手册

NPN 2N3227

SILICON ANNULAR TRANSISTORS

The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed

switching applications.

They are mounted in Jedec TO-18 metal.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

V_CES

Collector-Emitter Voltage

Collector Current

TOTAL Device Dissipation Ambient Temperature

Derating Factore Above

TOTAL Device Dissipation Case Temperature .

Derating Factore Above

500

0.36

2.06

1.2

6.85

I_{C (peak)}

P_D

Watts

mW/°C

Watts

mW/°C

25°

T_C

P_D

Junction Temperature

Storage Temperature range

+200

-65 to +200

T_J

T_Stg

°C

NPN 2N3227

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Test Condition(s)

Symbol

Ratings

Min Typ Mx Unit

I_E= 0 ; V_CB= 20V

I_E= 0 ; V_CB= 20V ; T_A= 150°C

V_CE= 20V ; V_EB(off)= 3V

0.2

0.5

Collector cut-off current

Collector cut-off curren

Base cut-off curren

Collector-Base Breakdown

voltage

I_CBO

I_CEX

I_BL

µA

V_CE= 20V ; V_EB(off)= 3V

I_C=10 µA ; I_B= 0

I_E=10 µA ; I_C= 0

BV_CBO

BV_EBO

Emitter-Base Breakdown

voltage

Collector-Emitter Breakdown

voltage (1)

Collector-Emitter voltage

I_C= 10 mA

BV_CEO

BV_CES

I_C=10 µA ; I_B= 0

COMSET SEMICONDUCTORS

1/2

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