Datasheet > 2N2060J

2N2060J

更新时间： 2024-02-25 16:40:20

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
3页	211K
描述
Silicon NPN Transistor

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技术参数
数据手册

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2N2060J 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	5.7	JESD-609代码：	e0
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2N2060J 数据手册

2N2060

Silicon NPN Transistor

Data Sheet

Description

Applications

• Matched, Dual Transistors

• Low power

Semicoa Semiconductors offers:

• NPN silicon transistor

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N2060J)

• JANTX level (2N2060JX)

• JANTXV level (2N2060JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Features

• Hermetically sealed TO-77 metal can

• Also available in chip configuration

• Chip geometry 0410

• Reference document:

MIL-PRF-19500/270

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

• Radiation testing available

Absolute Maximum Ratings

T_C= 25°C unless otherwise specified

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Symbol

Rating

100

500

Unit

Volts

V_CEO

V_CBO

V_EBO

I_C

540 one section

600 both sections

3.08 one section

3.48 both sections

Power Dissipation, T_A= 25°C

Derate linearly above 25°C

Power Dissipation, T_C= 25°C

Derate linearly above 25°C

P_T

mW/°C

1.5 one section

2.12 both sections

8.6 one section

mW/°C

12.1 both sections

Operating Junction Temperature

Storage Temperature

T_J

-65 to +200

°C

T_STG

Semicoa Semiconductors, Inc.

Rev. G

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

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