Datasheet > 2N2060M

2N2060M

更新时间： 2023-12-06 20:08:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
6页	578K
描述
60V,500mA,500mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch

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2N2060M 数据手册

2N2060M

www.centralsemi.com

SILICON

DUAL NPN TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2060M is a silicon

dual NPN transistor utilizing two individual chips mounted

in a hermetically sealed metal case designed for

differential amplifier applications.

MARKING: FULL PART NUMBER

TO-78 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

100

CBO

CER

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

7.0

Continuous Collector Current

Power Dissipation (One Die)

Power Dissipation (Both Dice)

500

600

Power Dissipation (One Die, T =25°C)

1.5

Power Dissipation (Both Dice, T =25°C)

3.0

Operating and Storage Junction Temperature

T , T

-65 to +200

°C

stg

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=80V

2.0

CBO

EBO

=5.0V

2.0

I =100μA

100

CBO

CER

CEO

EBO

CE(SAT)

BE(SAT)

I =10mA, R =10Ω

I =30mA

I =100μA

7.0

I =50mA, I =5.0mA

1.2

0.9

I =50mA, I =5.0mA

=5.0V, I =10μA

150

200

=5.0V, I =100μA

=5.0V, I =1.0mA

=5.0V, I =10mA

=10V, I =50mA, f=20MHz

MHz

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

=10V, I =300μA, R =510Ω,

C S

f=1.0kHz, BW=200Hz

8.0

R1 (2-December 2013)

12 3 4 5 6

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