Datasheet > 2EDS9265H

2EDS9265H

更新时间： 2023-09-03 20:35:00

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极驱动驱动器
页数	文件大小	规格书
38页	1439K
描述
快速稳健的双通道加强绝缘 MOSFET 栅极驱动器，具备准确稳定时序

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2EDS9265H 数据手册

EiceDRIVER™ 2EDi product family

2EDSx reinforced, 2EDFx functional isolated 4A/8A, 1A/2A gate drivers

Functional description

3.2.1

Typical applications by isolation type

Isolated gate drivers are typically deployed in the following applications.

Table 3

Isolation type Potential applications

•

High-power hard-switching high-voltage PFC, Vienna Rectifier, Totem Pole PFC or

Synchronous Rectification

Driving switches with Kelvin source connection (4-pin package)

Secondary-side control in low voltage isolated DC/DC topologies and brick converters

Secondary-side control of high voltage SJ-MOSFETs in LLC or PS-ZVS

Primary-side controlled synchronous rectification

1 A / 2 A PWM data- / signal-coupler for local boost gate drivers

Functional

Reinforced

3.3

•

Supply voltages

Three different power domains with independent internal power management are utilized to supply the input

chip and the two output drivers. An undervoltage lockout functionality (UVLO) in each domain enables a defined

startup and ensures a robust operation under all conditions.

3.3.1

Input-side power supply

The input side is powered via VDDI with nominal 3.3 V. For using the device with a supply voltage > 3.5 V the on-

chip switched low-dropout regulator (SLDO) must be activated and an external shunt resistor R_VDDIhas to be

connected to VDDI.

It is recommended to use a ceramic bypass capacitor (10 nF - 22 nF) between VDDI and GNDI.

The SLDO is activated if the pin SLDON is connected to GNDI. A hard-wired connection is recommended.

The SLDO regulates the current through an external resistor R_VDDIconnected between the external supply voltage

_DDand pin VDDI as depicted in Figure 1 to generate the required voltage drop. For proper operation it has to be

ensured that the current through R_VDDIalways exceeds the maximum supply current I_VDDof the input chip (see

Figure 7).

Thus, R_VDDIhas to fulfill:

_VDDI< (V_DD- 3.3) / I_{VDD, max}

A typical choice for V_DD= 12 V is R_VDDI= 3 kΩ, resulting in sufficient margin between resistor current and VDDI

operating current. Dynamic current peaks are eliminated by a blocking cap (10 to 22 nF) between VDDI and GNDI.

The total power consumption of 2EDi is dominated by the output side and depends on switching frequency, gate

resistor and gate charge, while for typical switching frequencies the input supply current stays relatively constant

(see Figure 6 to Figure 7).

3.3.2

Output-side power supply

Each gate driver channel has to be powered separately. It is recommended to use a ceramic bypass capacitor

(minimum value 20 x Ciss of MOSFET) from VDDA to GNDA and from VDDB to GNDB in close proximity to the

device.

The operating supply voltage can range from 4.5 V to 20 V for each gate drive channel.

The minimum gate driver turn-on voltage is set by the device Undervoltage Lockout (UVLO) to protect the power

MOSFETs from operating in the saturation region.

Devices with 4 V, 8 V and 13 V UVLO thresholds for the output supply are currently available (see Chapter 1.1.)

Final datasheet

Rev.2.8

2022-08-08

1...6 7 8910 11 12...38

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与2EDS9265H相关器件

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2EE	BTCPOWER	获取价格	15W DC-DC Converters
2EE-01	BTCPOWER	获取价格	15W DC-DC Converters
2EE-02	BTCPOWER	获取价格	15W DC-DC Converters
2EE-03	BTCPOWER	获取价格	15W DC-DC Converters
2EE-04	BTCPOWER	获取价格	15W DC-DC Converters
2EE-05	BTCPOWER	获取价格	15W DC-DC Converters
2EE-06	BTCPOWER	获取价格	15W DC-DC Converters
2EE-07	BTCPOWER	获取价格	15W DC-DC Converters
2EE-08	BTCPOWER	获取价格	15W DC-DC Converters
2EE-11	BTCPOWER	获取价格	15W DC-DC Converters

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