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2SA1303 PDF预览

2SA1303

更新时间: 2024-01-30 06:08:20
品牌 Logo 应用领域
三垦 - SANKEN 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
1页 27K
描述
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

2SA1303 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

2SA1303 数据手册

  
LAP T 2 S A1 3 0 3  
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)  
Application : Audio and General Purpose  
External Dimensions MT-100(TO3P)  
(Ta=25°C)  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
Conditions  
2SA1303  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
ICBO  
Unit  
µA  
µA  
V
2SA1303  
Unit  
±0.2  
4.8  
±0.4  
15.6  
±0.1  
2.0  
9.6  
VCB=150V  
VEB=5V  
–100max  
–100max  
–150min  
50min  
–150  
V
IEBO  
–150  
V
IC=25mA  
V(BR)CEO  
hFE  
–5  
V
a
b
±0.1  
ø3.2  
VCE=4V, IC=5A  
IC=5A, IB=0.5A  
VCE=12V, IE=2A  
VCB=10V, f=1MHz  
–14  
A
–2.0max  
50typ  
IB  
VCE(sat)  
fT  
V
MHz  
pF  
–3  
125(Tc=25°C)  
150  
A
PC  
2
W
°C  
°C  
400typ  
Tj  
COB  
3
+0.2  
-0.1  
+0.2  
-0.1  
1.05  
0.65  
1.4  
Tstg  
to  
–55 +150  
to  
to  
to  
hFE Rank O(50 100), P(70 140), Y(90 180)  
±0.1  
±0.1  
5.45  
5.45  
Typical Switching Characteristics (Common Emitter)  
B
C
E
Weight : Approx 6.0g  
a. Type No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
b. Lot No.  
–5  
–60  
12  
–10  
5
–500  
500  
0.25typ 0.85typ  
0.2typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=–4V)  
–3  
–2  
–1  
0
–14  
–12  
–8  
–4  
0
–10  
–5  
0
–50mA  
IC=–10A  
IB=–20mA  
–5A  
0
–1  
–2  
–3  
–4  
0
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
0
–1  
–2  
Collector-Emitter Voltage VCE(V)  
Base Current IB(A)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=–4V)  
(VCE=–4V)  
3
200  
200  
125˚C  
100  
50  
Typ  
1
25˚C  
100  
0.5  
–30˚C  
50  
30  
–0.02  
20  
–0.02  
0.1  
–0.1  
–0.5  
–1  
–5 –10 –14  
1
10  
100  
Time t(ms)  
1000 2000  
–0.1  
–0.5 –1  
Collector Current IC(A)  
–5 –10 –14  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=–12V)  
–40  
80  
60  
40  
130  
100  
–10  
–5  
50  
–1  
20  
0
Without Heatsink  
Natural Cooling  
–0.5  
Without Heatsink  
3.5  
0
–0.2  
–3  
–10  
–100  
–200  
0.02  
0.1  
1
10  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
Emitter Current IE(A)  
17  

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