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2SA1306AO PDF预览

2SA1306AO

更新时间: 2024-11-24 04:35:43
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
2页 106K
描述
Transistor

2SA1306AO 数据手册

 浏览型号2SA1306AO的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
2SA1306/A/B  
DESCRIPTION  
·Good Linearity of hFE  
·High Collector-Emitter Breakdown Voltage-  
V
(BR)CEO= -160V(Min)-2SA1306  
= -180V(Min)-2SA1306A  
= -200V(Min)-2SA1306B  
·Complement to Type 2SC3298/A/B  
APPLICATIONS  
·Power amplifier applications.  
·Driver stage amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-160  
-180  
-200  
-160  
-180  
-200  
-5  
UNIT  
2SA1306  
Collector-Base  
Voltage  
VCBO  
V
2SA1306A  
2SA1306B  
2SA1306  
Collector-Emitter  
Voltage  
VCEO  
V
2SA1306A  
2SA1306B  
VEBO  
Emitter-Base Voltage  
V
A
IC  
Collector Current-Continuous  
Base Current-Continuous  
-1.5  
IB  
-0.15  
20  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
W
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
isc Websitewww.iscsemi.cn  

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