2N7007

更新时间： 2024-02-09 18:52:46

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	21K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7007 数据手册

2N7007

N-Channel Enhancement-Mode

Vertical DMOS FET

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

BV_DGS

TO-92

240V

45Ω

150mA

2N7007

Features

■ Free from secondary breakdown

■ Low power drive requirement

■ Ease of paralleling

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

■ Low C_ISSand fast switching speeds

■ Excellent thermal stability

■ Integral Source-Drain diode

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

■ High input impedance and high gain

■ Complementary N- and P-channel devices

Applications

■ Motor controls

Package Options

■ Converters

■ Amplifiers

■ Switches

■ Power supply circuits

■ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

±30V

S G D

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note 1: See Package Outline section for dimensions.

7-13

下载PDF

与2N7007相关器件

型号	品牌	描述	获取价格	数据表
2N7007P001	SUPERTEX	暂无描述	获取价格
2N7007P002	SUPERTEX	Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Me	获取价格
2N7007P003	SUPERTEX	Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Me	获取价格
2N7007P005	SUPERTEX	Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Me	获取价格
2N7007P006	SUPERTEX	Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Me	获取价格
2N7007P007	SUPERTEX	Small Signal Field-Effect Transistor, 0.065A I(D), 240V, 1-Element, N-Channel, Silicon, Me	获取价格