Datasheet > 2N5018

2N5018

更新时间： 2024-02-14 12:38:34

品牌	Logo	应用领域
Linear Systems		开关
页数	文件大小	规格书
2页	246K
描述
SINGLE P-CHANNEL JFET SWITCH

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技术参数
数据手册

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2N5018 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	5.46	FET 技术：	JUNCTION
最高工作温度：	200 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.8 W	子类别：	FET General Purpose Small Signal
表面贴装：	NO

2N5018 数据手册

2N5018 SERIES

SINGLE P-CHANNEL

JFET SWITCH

Linear Integrated Systems

FEATURES

DIRECT REPLACEMENT FOR SILICONIX 2N5018

ZERO OFFSET VOLTAGE

LOW ON RESISTANCE

75Ω

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

TO-18

BOTTOM VIEW

Storage Temperature

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Maximum Currents

Gate Current

-55 to 200°C

500mW

-50mA

Maximum Voltages

Gate to Drain

Gate to Source

30V

STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)

2N5018 2N5019

SYM.

CHARACTERISTIC

TYP

UNITS CONDITIONS

MIN

MAX

MIN

MAX

BV_GSSGate to Source Breakdown Voltage

V_GS(off)Gate to Source Cutoff Voltage

I_G= 1µA, V_DS= 0V

V_DS= -15V, I_D= -1µA

V_GS= 0V, I_D= -6mA

V_GS= 0V, I_D= -3mA

V_DS= -20V, V_GS= 0V

V_GS= 15V, V_DS= 0V

V_DS= -15V, V_GS= 12V

V_DS= -15V, V_GS= 7V

V_DG= -15V, I_S= 0A

I_D= -1mA, V_GS= 0V

-0.5

V_DS(on)Drain to Source On Voltage

-0.5

I_DSS

I_GSS

Drain to Source Saturation Current²

Gate Leakage Current

-10

-5

-10

-2

-10

-2

I_D(off)

Drain Cutoff Current

µA

Ω

I_DGO

Drain Reverse Current

r_DS(on)

Drain to Source On Resistance

150

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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