MX29LV160C T/B
16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE
3VONLYFLASHMEMORY
FEATURES
• Ready/Busy# pin (RY/BY#)
• Extended single - supply voltage range 2.7V to 3.6V
• 2,097,152 x 8/1,048,576 x 16 switchable
• Singlepowersupplyoperation
-Providesahardwaremethodofdetectingprogramor
eraseoperationcompletion.
• Sectorprotection
- 3.0V only operation for read, erase and program
operation
• Fully compatible with MX29LV160B device
• Fast access time: 55R/70/90ns
- Hardware method to disable any combination of
sectors from program or erase operations
-Temporarysectorunprotectallowscodechangesin
previously locked sectors.
• Lowpowerconsumption
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 1.4V
• Package type:
- 30mA maximum active current
- 0.2uA typical standby current
• Commandregisterarchitecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability.
- Automatically program and verify data at specified
address
- 44-pin SOP
- 48-pin TSOP
• EraseSuspend/EraseResume
- 48-ball CSP
- Suspends sector erase operation to read data from,
orprogramdatato,any sectorthatisnotbeingerased,
then resumes the erase.
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• Status Reply
- Data# Polling & Toggle bit for detection of program
anderaseoperationcompletion.
• 10 years data retention
GENERAL DESCRIPTION
The MX29LV160C T/B is a 16-mega bit Flash memory
organized as 2M bytes of 8 bits or 1M words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV160C T/B is packaged in 44-pin
SOP, 48-pinTSOP and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV160C T/B uses a 2.7V~3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The standard MX29LV160C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29LV160C T/B has separate chip enable
(CE#) and output enable (OE#) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV160CT/B uses a command register to manage
this functionality. The command register allows for 100%
P/N:PM1186
REV. 1.2, JAN. 19, 2006
1
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