Datasheet > 存储 > EPROM> 27C64-12/L

27C64-12/L

更新时间： 2024-02-11 02:00:19

品牌	Logo	应用领域
美国微芯 - MICROCHIP		内存集成电路可编程只读存储器 OTP只读存储器电动程控只读存储器
页数	文件大小	规格书
10页	127K
描述
64K (8K x 8) CMOS EPROM

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技术参数
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27C64-12/L 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	0.300 INCH, PLASTIC, SOIC-28
针数：	28	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.71
风险等级：	5.71	Is Samacsys：	N
最长访问时间：	120 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-G28	JESD-609代码：	e0
长度：	17.87 mm	内存密度：	65536 bit
内存集成电路类型：	OTP ROM	内存宽度：	8
功能数量：	1	端子数量：	28
字数：	8192 words	字数代码：	8000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	8KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP28,.4
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	13 V
认证状态：	Not Qualified	座面最大高度：	2.64 mm
最大待机电流：	0.0001 A	子类别：	OTP ROMs
最大压摆率：	0.02 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	7.49 mm	Base Number Matches：	1

27C64-12/L 数据手册

27C64

1.3

Standby Mode

1.7

Verify

The standby mode is defined when the CE pin is high

(VIH) and a program mode is not defined.

After the array has been programmed it must be veri-

fied to ensure all the bits have been correctly pro-

grammed. This mode is entered when all the following

conditions are met:

When these conditions are met, the supply current will

drop from 20 mA to 100 µA.

a) VCC is at the proper level,

b) VPP is at the proper VH level,

c) the CE line is low,

1.4

Output Enable

This feature eliminates bus contention in microproces-

sor-based systems in which multiple devices may drive

the bus. The outputs go into a high impedance state

when the following condition is true:

d) the PGM line is high, and

e) the OE line is low.

1.8

Inhibit

• The OE and PGM pins are both high.

When programming multiple devices in parallel with dif-

ferent data, only CE or PGM need be under separate

control to each device. By pulsing the CE or PGM line

low on a particular device in conjunction with the PGM

or CE line low, that device will be programmed; all other

devices with CE or PGM held high will not be pro-

grammed with the data, although address and data will

be available on their input pins (i.e., when a high level

is present on CE or PGM); and the device is inhibited

from programming.

1.5

Erase Mode (U.V. Windowed

Versions)

Windowed products offer the capability to erase the

memory array. The memory matrix is erased to the all

1’s state when exposed to ultraviolet light. To ensure

complete erasure, a dose of 15 watt-second/cm²is

required. This means that the device window must be

placed within one inch and directly underneath an ultra-

violet lamp with a wavelength of 2537 Angstroms,

intensity of 12,000µW/cm²for approximately 20 min-

utes.

1.9

Identity Mode

In this mode, specific data is output which identifies the

manufacturer as Microchip Technology Inc. and device

type. This mode is entered when Pin A9 is taken to VH

(11.5V to 12.5V). The CE and OE lines must be at VIL.

A0 is used to access any of the two non-erasable bytes

whose data appears on O0 through O7.

1.6

Programming Mode

The Express Algorithm has been developed to improve

the programming throughput times in a production

environment. Up to ten 100-microsecond pulses are

applied until the byte is verified. No overprogramming

is required. A flowchart of the express algorithm is

shown in Figure 1-3.

Identity

Input

Output

Programming takes place when:

a) VCC is brought to the proper voltage,

b) VPP is brought to the proper VH level,

c) the CE pin is low,

0 O O O O O O O

d) the OE pin is high, and

Manufacturer

Device Type*

VIL

VIH

e) the PGM pin is low.

* Code subject to change

Since the erased state is “1” in the array, programming

of “0” is required. The address to be programmed is set

via pins A0-A12 and the data to be programmed is pre-

sented to pins O0-O7. When data and address are sta-

ble, OE is high, CE is low and a low-going pulse on the

PGM line programs that location.

DS11107M-page 6

2004 Microchip Technology Inc.

1...3 4 567 8 9 10

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与27C64-12/L相关器件

型号	品牌	描述	获取价格	数据表
27C64-12/P	MICROCHIP	64K (8K x 8) CMOS EPROM	获取价格
27C64-12/SO	MICROCHIP	64K (8K x 8) CMOS EPROM	获取价格
27C64-12/TS	ETC	x8 EPROM	获取价格
27C64-12E/J	MICROCHIP	8K X 8 UVPROM, 120 ns, CDIP28, 0.600 INCH, CERDIP-28	获取价格
27C64-12E/K	MICROCHIP	8K X 8 UVPROM, 120 ns, CQCC32, CERAMIC, LCC-32	获取价格
27C64-12E/L	ETC	x8 EPROM	获取价格

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