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26RIA10M PDF预览

26RIA10M

更新时间: 2024-02-28 09:56:22
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
1页 46K
描述
Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA

26RIA10M 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:POST/STUD MOUNT, O-MUPM-H3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.92配置:SINGLE
关态电压最小值的临界上升速率:300 V/us最大直流栅极触发电流:60 mA
最大直流栅极触发电压:2 VJEDEC-95代码:TO-208AA
JESD-30 代码:O-MUPM-H3湿度敏感等级:1
通态非重复峰值电流:370 A元件数量:1
端子数量:3最大通态电流:25000 A
最高工作温度:125 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):225
认证状态:Not Qualified最大均方根通态电流:40 A
断态重复峰值电压:100 V重复峰值反向电压:100 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

26RIA10M 数据手册

  

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26RIA120 INFINEON

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Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Ele
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Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Ele
26RIA120PBF INFINEON

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Silicon Controlled Rectifier, 40A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-208AA
26RIA140 INFINEON

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Silicon Controlled Rectifier, 40A I(T)RMS, 22000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Ele
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Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Ele
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Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Ele
26RIA20M INFINEON

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Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme
26RIA40 INFINEON

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Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme
26RIA40M INFINEON

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Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme
26RIA40PBF INFINEON

获取价格

Silicon Controlled Rectifier, 40A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-208AA