MB High Voltage Series
Single Phase Bridge
(Power Modules), 25 A/35 A
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Resistive or inductive load
Capacitive load
26MB-A
25
36MB-A
35
UNITS
A
Maximum DC output current
at case temperature
IO
20
28
65
60
°C
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
400
420
335
350
790
725
560
512
475
500
400
420
1130
1030
800
730
No voltage
reapplied
Maximum peak, one cycle
non-repetitive forward current
IFSM
A
100 % VRRM
reapplied
Initial TJ =
TJ maximum
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100 % VRRM
reapplied
I2t for time tx = I2√t x √tx;
0.1 ≤ tx ≤ 10 ms, VRRM = 0 V
Maximum I2√t for fusing
I2√t
5.6
11.3
kA2√s
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
Low level of threshold voltage
High level of threshold voltage
Low level forward slope resistance
High level forward slope resistance
VF(TO)1
VF(TO)2
rt1
0.70
0.75
7.0
0.74
0.79
5.5
V
(I > π x IF(AV)), TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)),
TJ maximum
mΩ
rt2
(I > π x IF(AV)), TJ maximum
6.4
5.2
TJ = 25 °C, IFM = 40 Apk
(26MB)
Maximum forward voltage drop
VFM
tp = 400 µs
1.25
1.3
V
TJ = 25 °C, IFM = 55 Apk
(36MB)
Maximum DC reverse current per diode
RMS isolation voltage base plate
IRRM
TJ = 25 °C, at VRRM
f = 50 Hz, t = 1 s
10
10
µA
V
VISOL
2700
2700
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
26MB-A
36MB-A
UNITS
Junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to case per bridge
RthJC
1.7
1.35
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Bridge to heatsink
0.2
Mounting torque 10 %
Approximate weight
2.0
20
Nm
g
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93564
Revision: 17-Jun-08