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22RIA40M PDF预览

22RIA40M

更新时间: 2024-02-08 04:00:03
品牌 Logo 应用领域
威世 - VISHAY 栅极触发装置可控硅整流器
页数 文件大小 规格书
8页 152K
描述
Medium Power Thyristors (Stud Version), 22 A

22RIA40M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-48
包装说明:POST/STUD MOUNT, O-MUPM-D2针数:2
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.07其他特性:HIGH RELIABILITY
配置:SINGLE关态电压最小值的临界上升速率:300 V/us
最大直流栅极触发电流:60 mA最大直流栅极触发电压:2 V
JEDEC-95代码:TO-208AAJESD-30 代码:O-MUPM-D2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:35 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:40
触发设备类型:SCRBase Number Matches:1

22RIA40M 数据手册

 浏览型号22RIA40M的Datasheet PDF文件第1页浏览型号22RIA40M的Datasheet PDF文件第3页浏览型号22RIA40M的Datasheet PDF文件第4页浏览型号22RIA40M的Datasheet PDF文件第5页浏览型号22RIA40M的Datasheet PDF文件第6页浏览型号22RIA40M的Datasheet PDF文件第7页 
22RIA Series  
Medium Power Thyristors  
(Stud Version), 22 A  
Vishay High Power Products  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
DRM/VRRM, MAXIMUM REPETITIVE PEAK  
V
RSM, MAXIMUM NON-REPETITIVE  
IDRM/IRRM MAXIMUM  
AT TJ = TJ MAXIMUM  
mA  
TYPE  
NUMBER  
VOLTAGE  
CODE  
AND OFF-STATE VOLTAGE (1)  
V
PEAK VOLTAGE (2)  
V
20  
10  
20  
100  
200  
150  
300  
40  
400  
500  
22RIA  
60  
600  
700  
10  
80  
800  
900  
100  
120  
1000  
1200  
1100  
1300  
Notes  
(1)  
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs  
For voltage pulses with tp 5 ms  
(2)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
180° sinusoidal conduction  
VALUES  
UNITS  
22  
A
°C  
A
Maximum average on-state current  
at case temperature  
IT(AV)  
85  
Maximum RMS on-state current  
IT(RMS)  
35  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
400  
420  
335  
355  
793  
724  
560  
515  
No voltage  
reapplied  
Maximum peak, one-cycle  
non-repetitive surge current  
ITSM  
A
100 % VRRM  
reapplied  
Sinusoidal  
half wave,  
initial TJ =  
TJ maximum  
No voltage  
reapplied  
Maximum I2t for fusing  
I2t  
A2s  
100 % VRRM  
reapplied  
t = 0.1 to 10 ms, no voltage reapplied,  
TJ = TJ maximum  
Maximum I2t for fusing  
I2t  
7930  
A2s  
(16.7 % x π x IT(AV) < I < π x IT(AV)),  
TJ = TJ maximum  
Low level value of threshold voltage  
High level value of threshold voltage  
VT(TO)1  
VT(TO)2  
rt1  
0.83  
0.95  
14.9  
V
(I > π x IT(AV)), TJ = TJ maximum  
Low level value of  
on-state slope resistance  
(16.7 % x π x IT(AV) < I < π x IT(AV)),  
TJ = TJ maximum  
mΩ  
High level value of  
on-state slope resistance  
rt2  
(I > π x IT(AV)), TJ = TJ maximum  
13.4  
Maximum on-state voltage  
Maximum holding current  
Latching current  
VTM  
IH  
Ipk = 70 A, TJ = 25 °C  
1.70  
130  
200  
V
TJ = 25 °C, anode supply 6 V, resistive load  
mA  
IL  
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93700  
Revision: 19-Sep-08  

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