Datasheet > 22C10

22C10

更新时间： 2024-02-25 22:42:16

品牌	Logo	应用领域
CATALYST		/
页数	文件大小	规格书
10页	74K
描述
256-Bit Nonvolatile CMOS Static RAM

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22C10 数据手册

CAT22C10

256-Bit Nonvolatile CMOS Static RAM

FEATURES

■ Single 5V Supply

■ Low CMOS Power Consumption:

–Active: 40mA Max.

■ Fast RAM Access Times:

–Standby: 30 µA Max.

–200ns

–300ns

■ JEDEC Standard Pinouts:

–18-pin DIP

■ Infinite E²PROM to RAM Recall

■ CMOS and TTL Compatible I/O

■ Power Up/Down Protection

–16-pin SOIC

■ 10 Year Data Retention

■ Commercial, Industrial and Automotive

■ 100,000 Program/Erase Cycles (E²PROM)

Temperature Ranges

DESCRIPTION

TheCAT22C10NVRAMisa256-bitnonvolatilememory

organized as 64 words x 4 bits. The high speed Static

RAM array is bit for bit backed up by a nonvolatile

E²PROM array which allows for easy transfer of data

from RAM array to E²PROM (STORE) and from

E²PROM to RAM (RECALL). STORE operations are

completed in 10ms max. and RECALL operations typi-

cally within 1.5µs. The CAT22C10 features unlimited

RAM write operations either through external RAM

writes or internal recalls from E²PROM. Internal false

store protection circuitry prohibits STORE operations

when V_CCis less than 3.0V.

The CAT22C10 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles (E²PROM)

and has a data retention of 10 years. The device is

availableinJEDECapproved18-pinplasticDIPand16-

pin SOIC packages.

PIN FUNCTIONS

PIN CONFIGURATION

DIP Package (P)

SOIC Package (J)

Pin Name

A₀–A₅

I/O₀–I/O₃

Function

Address

Data In/Out

Write Enable

Chip Select

Recall

1 6

1 5

1 4

1 8

1 7

1 6

1 5

1 4

I/O

RECALL

STORE

V_CC

RECALL

STORE

Store

+5V

STORE

RECALL

V_SS

Ground

22C10 F01

22C10 F02

No Connect

Characteristics subject to change without notice

Doc. No. 25018-0A 2/98 N-1

12 3 4 5 6 7...10

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