1SS286TDX

更新时间： 2024-02-05 10:22:10

品牌	Logo	应用领域
日立 - HITACHI		肖特基二极管微波混频二极管开关
页数	文件大小	规格书
6页	30K
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1SS286TDX 数据手册

1SS286

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

V_R

I_F

°C

150

100

Tstg

–55 to +100

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

—

Max

0.6

—

Unit

Test Condition

I_F= 10mA

Forward voltage

Reverse voltage

Reverse current

Capacitance

V_F

V_R

I_R

—

I_R= 10µA

—

V_R= 10V

—

1.2

0.1

V_R= 0V, f = 1MHz

I_F= 10mA

Capacitance deviation ∆C

—

Forward voltage

deviation

∆V_F

—

ESD-Capability

—

*¹C = 200pF, Both forward and

reverse direction 1 pulse.

Notes: 1. Failure criterion; I_R≥ 20µA

2. Each group shall unify a multiple of 4 diodes

Rev.1, Sep. 1995, page 2 of 6

123 4 5 6

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