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1SMA4761 PDF预览

1SMA4761

更新时间: 2024-02-10 00:18:01
品牌 Logo 应用领域
SSC 二极管
页数 文件大小 规格书
4页 201K
描述
SURFACE MOUNT SILICON ZENDER DIODE

1SMA4761 技术参数

Case Style:SMAPd(W):1
VZ(Min):-VZ(Nom):75
VZ(Max):-IZT(mA):3.3
IR(uA):5.0VR(V):56.0
class:Diodes

1SMA4761 数据手册

 浏览型号1SMA4761的Datasheet PDF文件第1页浏览型号1SMA4761的Datasheet PDF文件第2页浏览型号1SMA4761的Datasheet PDF文件第3页 
1SMA4741 thru 1SMA200Z  
RATINGS ANAD CHARACTERISTIC CURVES (1SMA4741 THRU 1SMA200Z)  
FIG.6- TYPICAL CAPACITANCE versus Vz  
FIG.7- TEMPERATURE COEFFICIENTS  
400  
a-RANGE FOR UNITS TO 12 VOLTS  
300  
+12  
200  
+10  
+8.0  
+6.0  
0V BIAS  
1.0V BIAS  
100  
+4.0  
+2.0  
0
VZ @ IZT  
RANGE  
10  
8
50% OF BREAKDOWN BIAS  
10  
-2.0  
-4.0  
4
1
100  
2
3
4
5
6
7
8
9
10  
11  
12  
VZ, FORWARD VOLTAGE (VOLTS)  
VZ, ZENER VOLTAGE (VOLTS)  
FIG.8- TEMPERATURE COEFFICIENTS  
b-RANGE FOR UNITS 11 TO 100 VOLTS  
FIG.9- EFFECT OF ZENER CURRENT  
+6.0  
+4.0  
100  
70  
50  
VZ @ IZT  
TJ=25 o  
C
30  
20  
+2.0  
20mA  
VZ @ IZT  
10  
RANGE  
0
-2.0  
-4.0  
7
5
0.01mA  
1.0mA  
3
2
NOTE: BELOW 3 VOLTS AND ABOVE a VOLTS  
CHANGES IN ZENER CURRENT OO NOT  
AFFECT TEMPERATURE COEFFICIENTS  
1
3
4
5
6
7
8
10  
20  
30  
50  
70  
100  
VZ  
, ZENER VOLTAGE (VOLTS)  
VZ, ZENER VOLTAGE (VOLTS)  
FIG.10- MAXIMUM SURGE POWER  
100  
70  
50  
RECTANGULAR  
WAVEFORM  
TJ = 25oC PRIOR TO  
INITIAL PULSE  
30  
20  
10  
7
5
20% DUTY CYCLE  
3
2
1
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
200  
500  
1000  
PW, PULSE WIDTH (ms)  
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no  
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no  
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its  
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including  
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to  
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of  
Silicon Standard Corporation or any third parties.  
08/22/2007 Rev.1.00  
www.SiliconStandard.com  
4

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