Datasheet > 1N757ARL2

1N757ARL2

更新时间： 2024-01-09 13:49:38

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	73K
描述
9.1V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

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1N757ARL2 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.79	Is Samacsys：	N
配置：	SINGLE	二极管类型：	ZENER DIODE
最大动态阻抗：	10 Ω	元件数量：	1
最高工作温度：	200 °C	最大功率耗散：	0.5 W
标称参考电压：	9.1 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	最大电压容差：	5%
工作测试电流：	20 mA	Base Number Matches：	1

1N757ARL2 数据手册

1N4370A Series

APPLICATION NOTE — ZENER VOLTAGE

500

400

300

200

100

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

Lead Temperature, T , should be determined from:

2.4-60ĂV

T_L= θ_LAP_D+ T_A.

is the lead-to-ambient thermal resistance (°C/W) and P

62-200ĂV

0.6

is the power dissipation. The value for θ will vary and

depends on the device mounting method. θ is generally 30

to 40°C/W for the various clips and tie points in common use

and for printed circuit board wiring.

0.2

0.4

0.8

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

L, LEAD LENGTH TO HEAT SINK (INCH)

Figure 2. Typical Thermal Resistance

1000

7000

5000

TYPICAL LEAKAGE CURRENT

AT 80% OF NOMINAL

BREAKDOWN VOLTAGE

Using the measured value of T , the junction temperature

2000

may be determined by:

1000

700

500

T_J= T_L+ ∆T_JL

∆T is the increase in junction temperature above the lead

200

temperature and may be found from Figure 2 for dc power:

∆T_JL= θ_JLP_D.

100

For worst-case design, using expected limits of I , limits

of P and the extremes of T (∆T ) may be estimated.

Changes in voltage, V , can then be found from:

∆V = θ_VZT_J.

, the zener voltage temperature coefficient, is found

from Figures 4 and 5.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

0.7

0.5

+125°C

0.2

Surge limitations are given in Figure 7. They are lower

than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots, resulting in device

degradation should the limits of Figure 7 be exceeded.

0.1

0.07

0.05

0.02

0.01

0.007

0.005

+25°C

0.002

0.001

10 11 12 13 14 15

V , NOMINAL ZENER VOLTAGE (VOLTS)

Figure 3. Typical Leakage Current

http://onsemi.com

1 2 345 6 7...12

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