1N5951B

更新时间： 2024-01-13 08:26:55

品牌	Logo	应用领域
安森美 - ONSEMI		稳压器二极管齐纳二极管测试
页数	文件大小	规格书
8页	70K
描述
3 W DO−41 Surmetic TM 30 Zener Voltage Regulators

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1N5951B 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
配置：	SINGLE	二极管类型：	ZENER DIODE
最大动态阻抗：	380 Ω	元件数量：	1
最高工作温度：	200 °C	最大功率耗散：	1.5 W
标称参考电压：	120 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	最大电压容差：	1%
工作测试电流：	3.1 mA	Base Number Matches：	1

1N5951B 数据手册

1N5913B Series

APPLICATION NOTE

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

DT is the increase in junction temperature above the lead

temperature and may be found from Figure 2 for a train of

power pulses (L = 3/8 inch) or from Figure 10 for dc power.

DT_JL= q_JLP_D

For worst-case design, using expected limits of I , limits

Lead Temperature, T , should be determined from:

of P and the extremes of T (DT ) may be estimated.

T_L= q_LAP_D+ T_A

Changes in voltage, V , can then be found from:

is the lead-to-ambient thermal resistance (°C/W) and

DV = q_VZDT_J

P is the power dissipation. The value for q will vary and

depends on the device mounting method. q is generally

30−40°C/W for the various clips and tie points in common

use and for printed circuit board wiring.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

, the zener voltage temperature coefficient, is found

from Figures 5 and 6.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 2 should not be used to compute surge

capability. Surge limitations are given in Figure 3. They are

lower than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 3 be exceeded.

Using the measured value of T , the junction temperature

may be determined by:

T_J= T_L+ DT_JL

http://onsemi.com

1 2 3 456 7 8

中文翻译

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与1N5951B相关器件

型号	品牌	获取价格	描述	数据表
1N5951B3P	MCC	获取价格	Tape : 5K/Reel, 20K/Ctn; Bulk: 1K/Box, 50K/Ctn; T/B: 5K/Ammo Box, 50K/Ctn.;
1N5951B3P-AP-HF	MCC	获取价格	Zener Diode,
1N5951B3P-BP-HF	MCC	获取价格	Zener Diode,
1N5951B3P-TP	MCC	获取价格	Zener Diode, 120V V(Z), 5%, 1.5W,
1N5951BG	ONSEMI	获取价格	3 W DO−41 Surmetic TM 30 Zener Voltage Regulators
1N5951BG	MICROSEMI	获取价格	Zener Voltage Regulator Diode
1N5951BGE3	MICROSEMI	获取价格	Zener Diode, 120V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-204AL, HERMETIC SEALED, GLAS
1N5951BGTR	MICROSEMI	获取价格	Zener Diode, 120V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-204AL, HERMETIC SEALED, GLAS
1N5951B-LF	WTE	获取价格	Zener Diode
1N5951B-LFR	FRONTIER	获取价格	1.5 WATT SILICON ZENER DIODE

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