Datasheet > 1N5817/56

1N5817/56

更新时间： 2022-12-01 23:50:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	179K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N5817/56 数据手册

1N5817, 1N5818, 1N5819

Vishay General Semiconductor

400

T_J= 25°C

f = 1.0 MH_Z

V_sig= 50mVp-p

T_J= 125°C

Pulse Width = 300µs

1% Duty Cycle

100

1.0

0.1

T_J= 25°C

0.01

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

100

T_J= 125°C

1.0

0.1

T_J= 75°C

0.01

T_J= 25°C

0.001

0.1

0.01

100

0.1

100

Percent of Rated Peak Reverse Voltage (%)

t — Pulse Duration (sec.)

Figure 4. Typical Reverse Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

Document Number 88525

13-Jul-05

www.vishay.com

1 234

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