Datasheet > 1N5817/4E

1N5817/4E

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	179K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N5817/4E 数据手册

1N5817, 1N5818, 1N5819

Vishay General Semiconductor

Electrical Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Test condition

at 1.0 ⁽¹⁾

Symbol

V_F

1N5817

0.450

1N5818

0.550

1N5819

0.600

Unit

Maximum instantaneous

forward voltage

at 3.1 ⁽¹⁾

Maximum instantaneous

forward voltage

V_F

I_R

0.750

0.875

0.900

Maximum average reverse

current at rated DC blocking

voltage ⁽¹⁾

T_A= 25 °C

T_A= 100 °C

1.0

Typical junction capacitance

at 4.0 V, 1.0 MHz

C_J

110

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Thermal Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Typical thermal resistance⁽¹⁾

Symbol

R_θJA

R_θJL

1N5817

1N5818

1N5819

Unit

°C/W

Notes:

(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise specified)

1.0

Resistive or

Inductive Load

0.375" (9.5mm)

Lead Length

0.75

0.5

0.25

140

100

120

100

Case Temperature (

Number of Cycles at 60 H_Z

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88525

13-Jul-05

123 4

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