1N5552

更新时间： 2024-02-23 15:54:00

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
2页	56K
描述
GLASS PASSIVATED JUNCTION RECTIFIER

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5552 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.63	Is Samacsys：	N
应用：	GENERAL PURPOSE	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1.2 V
JESD-30 代码：	O-LALF-W2	元件数量：	1
相数：	1	端子数量：	2
最大输出电流：	5 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
认证状态：	Not Qualified	最大反向电流：	1 µA
最大反向恢复时间：	0.002 µs	表面贴装：	NO
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

1N5552 数据手册

1N5550 THRU 1N5552

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 200 to 1000 Volts Forward Current - 3.0 Amperes

FEATURES

♦ Glass passivated cavity-free junction

♦ High temperature metallurgically bonded construction

♦ Hermetically sealed package

Case Style G4

♦ Capable of meeting

environmental

standards of

1.0 (25.4)

MIN.

0.180 (4.6)

0.115 (2.9)

DIA.

MIL-S-19500

♦ Medium switching for

improved efficiency

♦ High temperature soldering guaranteed:

0.300 (7.6)

MAX.

350°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.042 (1.07)

1.0 (25.4)

0.038 (0.962)

MECHANICAL DATA

MIN.

DIA.

Case: Solid glass body

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

Mounting Position: Any

Weight: 0.037 ounce, 1.04 grams

Brazed-lead assembly is covered by Patent No. 3,930,306

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

1N5550

200

1N5551

400

1N5552

600

UNITS

Volts

*Maximum repetitive peak reverse voltage

Maximum RMS voltage

140

280

420

*Maximum DC blocking voltage

200

400

600

*Minimum reverse breakdown voltage at 50µA

V_(BR)

240

460

660

*Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55°C

I_(AV

)

3.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

V_F

100.0

1.2

Amps

Volts

µA

Maximum instantaneous forward voltage at 9.0A

*Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=100°C

T_A=200°C

1.0

25.0

1500.0

I_R

*Maximum junction capacitance _{(NOTE 1}

*Maximum reverse recovery time _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3}

)

C_J

t_rr

150

120

2.0

100

µs

)

R_ΘJA

R_ΘJL

22.0

12.0

°C/W

°C

*Operating and storage temperature range

T_J, T_STG

-65 to +200

NOTES:

(1) Measured at 1.0 MH_Zand applied reverse voltage of 12.0 Volts

(2) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length,

with both leads mounted between heat sinks.

*JEDEC registered values

4/98

下载PDF

与1N5552相关器件

型号	品牌	描述	获取价格	数据表
1N5552BK	CENTRAL	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,	获取价格
1N5552R	MICROSEMI	Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon,	获取价格
1N5552S	SENSITRON	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,	获取价格
1N5552TR	CENTRAL	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,	获取价格
1N5552TRLEADFREE	CENTRAL	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,	获取价格
1N5552US	SEMTECH	Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5552

1N5552 技术参数

1N5552 数据手册

与1N5552相关器件

与1N5552相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5552

1N5552 技术参数

1N5552 数据手册

与1N5552相关器件

与1N5552相关文章

您还可以找

您在本页遇到什么问题？