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1N4989USE3 PDF预览

1N4989USE3

更新时间: 2024-01-26 15:26:21
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
4页 534K
描述
Zener Diode, 200V V(Z), 5%, 5W, Silicon, Unidirectional,

1N4989USE3 技术参数

生命周期:Active包装说明:O-MELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-MELF-R2元件数量:1
端子数量:2封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:5 W
标称参考电压:200 V表面贴装:YES
技术:ZENER端子形式:WRAP AROUND
端子位置:END最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

1N4989USE3 数据手册

 浏览型号1N4989USE3的Datasheet PDF文件第1页浏览型号1N4989USE3的Datasheet PDF文件第2页浏览型号1N4989USE3的Datasheet PDF文件第3页 
1N4954US thru 1N4996US, 1N5968US thru  
1N5969US, and 1N6632US thru 1N6637US  
VOIDLESS-HERMETICALLY-SEALED  
Surface Mount 5 WATT GLASS ZENER  
S C O T T S D A L E D I V I S I O N  
PACKAGE DIMENSIONS AND PAD LAYOUT  
This Package Outline has also previously  
been identified as “D-5B”  
Note: If mounting requires adhesive separate from the solder,  
an additional 0.080 inch diameter contact may be placed in the  
center between the pads as an optional spot for cement as  
shown in the pad layout.  
Copyright 2004  
Microsemi  
Scottsdale Division  
Page 4  
11-22-2004 REV B  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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