Datasheet > 1N4756A

1N4756A

更新时间： 2024-01-29 20:34:52

品牌	Logo	应用领域
TRSYS		稳压二极管测试
页数	文件大小	规格书
5页	351K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

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数据手册

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1N4756A 数据手册

1N4741A THRU 1M200Z

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 1.0 Watt

DO-41

FEATURES

Low profile package

Built-in strain relief

Glass passivated junction

Low inductance

Typical I_Rless than 5.0 A above 11V

High temperature soldering :

260 /10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: Molded plastic, DO-41

Epoxy: UL 94V-O rate flame retardant

Lead: Axial leads, solderable per MIL-STD-202,

method 208 guaranteed

Polarity: Color band denotes cathode end

Mounting position: Any

Weight: 0.012 ounce, 0.3 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_D

VALUE

1.0

6.67

UNITS

Watts

mW/

Peak Pulse Power Dissipation on T_A=50 (Note A)

Derate above 50

Peak forward Surge Current 8.3ms single half sine-wave

superimposed on rated load(JEDEC Method) (Note B)

Operating Junction and Storage Temperature Range

I_FSM

Amps

T_J,T_STG

-55 to +150

NOTES:

A. Mounted on 5.0mm²(.013mm thick) land areas.

B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

12 3 4 5

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1N4756A-B	DIODES	获取价格	暂无描述
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