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1N4005W PDF预览

1N4005W

更新时间: 2024-01-17 13:46:52
品牌 Logo 应用领域
佑风微 - YFW 光电二极管
页数 文件大小 规格书
3页 473K
描述
Surface Mount General Purpose Silicon Rectifiers

1N4005W 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4005W 数据手册

 浏览型号1N4005W的Datasheet PDF文件第2页浏览型号1N4005W的Datasheet PDF文件第3页 
1N4001W THRU 1N4007W SOD123FL  
Surface Mount General Purpose Silicon Rectifiers  
Reverse Voltage - 50 to 1000 V  
Forward Current - 1 A  
Pinning  
1.Cathode  
2.Anode  
1
FEATURES  
2
For surface mounted applications  
Low profile package  
Glass Passivated Chip Junction  
Ideal for automated placement  
SOD123FL  
Marking Code  
Lead free in comply with EU RoHS 2011/65/EU directives  
1N4001W  
1N4002W  
1N4003W  
1N4004W  
1N4005W  
1N4006W  
1N4007W  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
MECHANICAL DATA  
Case: SOD-123FL  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 15mg /0.00053oz  
Maximum Ratings and Electrical characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.  
Symbols  
VRRM  
1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W  
Parameter  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
Units  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRMS  
Maximum DC Blocking Voltage  
VDC  
100  
1000  
Maximum Average Forward Rectified Current  
at Tc = 125 °C  
IF(AV)  
1
A
Peak Forward Surge Current 8.3 ms Single  
Half Sine Wave Superimposed on Rated Load  
IFSM  
30  
A
V
Maximum Instantaneous Forward Voltage at 1 A  
VF  
1.1  
Maximum DC Reverse Current Ta = 25 °C  
at Rated DC Blocking Voltage Ta=125 °C  
5
50  
μA  
IR  
Typical Junction Capacitance1)  
Typical Thermal Resistance 2)  
Cj  
pF  
°C/W  
°C  
11  
90  
RθJA  
Operating and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 3  

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