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1N3611_04 PDF预览

1N3611_04

更新时间: 2022-04-23 23:00:11
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美高森美 - MICROSEMI 整流二极管
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描述
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLAS RECTIFIERS

1N3611_04 数据手册

 浏览型号1N3611_04的Datasheet PDF文件第2页浏览型号1N3611_04的Datasheet PDF文件第3页 
1N3611 thru 1N3614, 1N3957  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/228 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak  
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF  
package configurations are available by adding a “US” suffix (see separate data  
sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other  
rectifier products to meet higher and lower current ratings with various recovery time  
speed requirements including fast and ultrafast device types in both through-hole  
and surface mount packages.  
“A” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Popular JEDEC registered 1N3611 thru 1N3614 and  
Standard recovery 1 Amp rectifiers 200 to 1000 V  
1N3597 series  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
High forward surge current capability  
Extremely robust construction  
Low thermal resistance  
JAN, JANTX, and JANTXV available per MIL-PRF-  
Controlled avalanche with peak reverse power  
19500/286 (for JANS, see 1N5614-5622 series)  
capability  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (also  
see 1N5614US thru 1N5622US)  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Junction & Storage Temperature: -65oC to +175oC  
CASE: Hermetically sealed voidless hard glass  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 100ºC and 0.30 Amps at 150ºC  
Forward Surge Current: 30 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
with Tungsten slugs  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 340 mg  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
(NOTE 2)  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
SURGE  
PEAK  
MAXIMUM REVERSE  
CURRENT  
REVERSE  
VOLTAGE  
CURRENT  
(NOTE1)  
TYPE  
V
@ 1 A  
F
V
V
@ 100µA  
I
I
@ V  
I
(PULSED)  
VOLTS  
RWM  
BR  
O
R
RWM  
FSM  
VOLTS  
VOLTS  
AMPS  
AMPS  
µA  
o
150oC  
25oC  
1.0  
1.0  
1.0  
1.0  
1.0  
150oC  
300  
300  
300  
300  
300  
JAN1N3611  
JAN1N3612  
JAN1N3613  
JAN1N3614  
JAN1N3957  
200  
400  
240  
480  
1100.0C  
1.0  
0.30  
0.30  
0.30  
0.30  
0.30  
1.1  
1.1  
1.1  
1.1  
1.1  
30  
30  
30  
30  
30  
600  
720  
1.0  
800  
920  
1.0  
1000  
1150  
1.0  
NOTE 1: TA = 25oC, IO = 1.0 A, 10 surges of 8.3 ms @ 1 minute intervals  
NOTE 2: Linearly derate at 13.3 mA/ºC between TA=100ºC and 175ºC  
Copyright 2004  
12-08 2004 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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