Datasheet > 1N3611GP

1N3611GP

更新时间： 2024-02-29 03:26:31

品牌	Logo	应用领域
台芯 - TAYCHIPST		/
页数	文件大小	规格书
2页	1875K
描述
Glass Passivated Junction Rectifier

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1N3611GP 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.84
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.1 V	最大非重复峰值正向电流：	40 A
元件数量：	1	最高工作温度：	175 °C
最大输出电流：	1 A	最大重复峰值反向电压：	200 V
最大反向恢复时间：	2 µs	子类别：	Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

1N3611GP 数据手册

1N3611GP THRU 1N3614GP,1N3957GP

200V-1000V

1.0A

Glass Passivated Junction Rectifier

FEATURES

• Superectifier structure for high reliability

• Cavity-free glass-passivated junction

• Low forward voltage drop

application

• Low leakage current, I_Rless than 0.1 μA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

MECHANICAL DATA

Case: DO-204AL, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

3611GP

3612GP

3613GP

3614GP

3957GP

UNITS

Volts

Amps

Maximum repetitive peak reverse voltage

Maximum RMS voltage

200

140

200

400

280

400

600

420

600

800

1000

700

RRM

RMS

560

Maximum DC blocking voltage

800

1000

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=75°C

I_(AV)

1.0

Amps

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

30.0

1.0

Maximum instantaneous forward voltage at 1.0A

_A=25°C

V_F

I_R

Volts

1.0

300.0

µA

at rated DC blocking voltage

T_A=150°C

Typical reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

t_rr

2.0

8.0

µs

C_J

R_ΘJA

R_ΘJL

55.0

25.0

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-65 to +175

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted

* JEDEC registered values

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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型号	品牌	描述	获取价格	数据表
1N3611GP/100	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
1N3611GP/4F	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
1N3611GP/4G	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
1N3611GP/4H	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
1N3611GP/51	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格
1N3611GP/53	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN	获取价格

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