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1N3155-1-2%TR PDF预览

1N3155-1-2%TR

更新时间： 2024-01-12 22:15:04
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 130K
描述
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN

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1N3155-1-2%TR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DO-7
包装说明：O-LALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.69
其他特性：METALLURGICAL BONDED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJEDEC-95代码：DO-204AA
JESD-30 代码：O-LALF-W2JESD-609代码：e0
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：0.5 W认证状态：Not Qualified
标称参考电压：8.4 V表面贴装：NO
技术：ZENER端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIED电压温度Coeff-Max：0.42 mV/ °C
最大电压容差：4.76%Base Number Matches：1

1N3155-1-2%TR 数据手册

 浏览型号1N3155-1-2%TR的Datasheet PDF文件第1页浏览型号1N3155-1-2%TR的Datasheet PDF文件第3页 
1N3154 thru 1N3157, A, -1, e3  
8.4 Volt Temperature Compensated Zener  
Reference Diodes  
S C O T T S D A L E D I V I S I O N  
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified  
VOLTAGE  
MAXIMUM  
REVERSE  
CURRENT  
IR @ 5.5 V  
MAXIMUM  
ZENER  
IMPEDANCE  
(Note 2)  
ZZT  
TEMPERATURE  
STABILITY  
(Note 3 & 4)  
ΔVZT  
EFFECTIVE  
TEMPERATURE  
COEFFICIENT  
αVZ  
ZENER  
VOLTAGE  
VZ @ IZT  
ZENER  
TEST  
CURRENT  
IZT  
JEDEC  
TYPE  
NUMBERS  
(Notes 1, 5  
& 6)  
TEMPERATURE  
RANGE  
(Note 1)  
MAXIMUM  
VOLTS  
mA  
OHMS  
mV  
oC  
%/oC  
μA  
10  
10  
10  
10  
10  
10  
10  
10  
1N3154  
1N3154A  
1N3155  
1N3155A  
1N3156  
1N3156A  
1N3157  
1N3157A  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
10  
10  
10  
10  
10  
10  
10  
10  
15  
15  
15  
15  
15  
15  
15  
15  
130  
172  
65  
86  
26  
34  
13  
17  
-55 to +100  
-55 to +150  
-55 to +100  
-55 to +150  
-55 to +100  
-55 to +150  
-55 to +100  
-55 to +150  
0.01  
0.01  
0.005  
0.005  
0.002  
0.002  
0.001  
0.001  
*JEDEC Registered Data.  
NOTES:  
1. When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance,  
e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.  
2. Measured by superimposing 1.0 mA ac rms on 10 mA dc @ 25oC.  
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the  
specified mV change at any discrete temperature between the established limits.  
4. Voltage measurements to be performed 15 seconds after application of dc current.  
5. The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by  
adding JAN, JANTX, or JANTXV prefix to part numbers as well as “-1” suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc.  
6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH3157A instead of 1N3157A.  
GRAPHS  
The curve shown in Figure 1 is typical of the diode series and  
greatly simplifies the estimation of the Temperature Coefficient  
(TC) when the diode is operated at currents other than 10mA.  
EXAMPLE: A diode in this series is operated at a current of  
10mA and has specified Temperature Coefficient (TC) limits of  
+/-0.005%/oC. To obtain the typical Temperature Coefficient  
limits for this same diode operated at a current of 7.5mA, the  
new TC limits (%/oC) can be estimated using the graph in  
FIGURE 1.  
At a test current of 7.5mA the change in Temperature Coefficient  
(TC) is approximately –0.0012%.oC. The algebraic sum of +/-  
0.005%oC and –0.0012%/oC gives the new estimated limits of  
+0.0038%/oC and -0.0062%/oC.  
IZ – Operating Current (mA)  
FIGURE 1  
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT  
WITH CHANGE IN OPERATING CURRENT.  
Copyright © 2005  
7-18-2005 REV B  
Microsemi  
Scottsdale Division  
Page 2  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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