5秒后页面跳转
1N1183RAPBF PDF预览

1N1183RAPBF

更新时间: 2024-02-09 07:33:08
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
8页 296K
描述
Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN

1N1183RAPBF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.64
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N1183RAPBF 数据手册

 浏览型号1N1183RAPBF的Datasheet PDF文件第2页浏览型号1N1183RAPBF的Datasheet PDF文件第3页浏览型号1N1183RAPBF的Datasheet PDF文件第4页浏览型号1N1183RAPBF的Datasheet PDF文件第5页浏览型号1N1183RAPBF的Datasheet PDF文件第6页浏览型号1N1183RAPBF的Datasheet PDF文件第7页 
1N1183, 1N3765, 1N1183A, 1N2128A Series  
Vishay High Power Products  
Power Silicon Rectifier Diodes,  
35 A/40 A/60 A  
DESCRIPTION/FEATURES  
• Low leakage current series  
• Good surge current capability up to 1000 A  
• Can be supplied to meet stringent military, aerospace and  
other high reliability requirements  
• Compliant to RoHS directive 2002/95/EC  
DO-203AB (DO-5)  
PRODUCT SUMMARY  
IF(AV)  
35 A/40 A/60 A  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
1N1183  
35 (1)  
140 (1)  
480  
500 (1)  
1N3765  
35 (1)  
140 (1)  
1N1183A  
40 (1)  
150 (1)  
1N2128A  
60 (1)  
140 (1)  
UNITS  
A
IF(AV)  
TC  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
380  
765  
860  
IFSM  
I2t  
A
400 (1)  
730  
800 (1)  
2900  
900 (1)  
3700  
1140  
A2s  
1040  
670  
2650  
3400  
I2t  
16 100  
50 to 600 (1)  
10 300  
700 to 1000 (1)  
41 000  
50 to 600 (1)  
52 500  
50 to 600 (1)  
A2s  
VRRM  
Range  
V
Note  
(1)  
JEDEC registered values  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VRRM, MAXIMUM REPETITIVE  
PEAK REVERSE VOLTAGE  
V
RM, MAXIMUM DIRECT  
REVERSE VOLTAGE  
TYPE NUMBER  
(TJ = - 65 °C TO 200 °C (2)  
V
)
(TJ = - 65 °C TO 200 °C (2)  
V
)
1N1183  
1N1184  
1N1185  
1N1186  
1N1187  
1N1188  
1N1189  
1N1190  
1N3765  
1N3766  
1N3767  
1N3768  
1N1183A  
1N1184A  
1N1185A  
1N1186A  
1N1187A  
1N1188A  
1N1189A  
1N1190A  
1N2128A  
50 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
700 (1)  
800 (1)  
900 (1)  
1000 (1)  
50 (1)  
100 (1)  
150 (1)  
200 (1)  
300 (1)  
400 (1)  
500 (1)  
600 (1)  
700 (1)  
800 (1)  
900 (1)  
1000 (1)  
1N2129A  
1N2130A  
1N2131A  
1N2133A  
1N2135A  
1N2137A  
1N2138A  
Notes  
(1)  
JEDEC registered values  
For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C  
Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135AR  
(2)  
Document Number: 93492  
Revision: 25-May-09  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

与1N1183RAPBF相关器件

型号 品牌 描述 获取价格 数据表
1N1183RAPBFREE CENTRAL Rectifier Diode,

获取价格

1N1184 INFINEON 35,40,and 60 Amp Power Silicon Rectifier Diodes

获取价格

1N1184 VISHAY Power Silicon Rectifier Diodes, 35 A/40 A/60 A

获取价格

1N1184 NJSEMI Silicon Power Rectifier

获取价格

1N1184 AMERICASEMI DEVICE HIGH POWER STANDARD

获取价格

1N1184 MICROSEMI Military Silicon Power Rectifier

获取价格