Datasheet > 1M120ZS5

1M120ZS5

更新时间： 2024-02-13 11:10:03

品牌	Logo	应用领域
其他 - ETC		稳压二极管测试
页数	文件大小	规格书
42页	428K
描述
500 mW DO-35 Glass Zener Voltage Regulator Diodes

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1M120ZS5 技术参数

生命周期：	Obsolete	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.7
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-41	JESD-30 代码：	O-PALF-W2
膝阻抗最大值：	4500 Ω	元件数量：	1
端子数量：	2	最高工作温度：	200 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
极性：	UNIDIRECTIONAL	最大功率耗散：	3 W
认证状态：	Not Qualified	标称参考电压：	180 V
最大反向电流：	5 µA	表面贴装：	NO
技术：	ZENER	端子形式：	WIRE
端子位置：	AXIAL	最大电压容差：	5%
工作测试电流：	1.4 mA	Base Number Matches：	1

1M120ZS5 数据手册

GENERAL DATA — 500 mW DO-35 GLASS

APPLICATION NOTE — ZENER VOLTAGE

500

400

300

200

100

Since the actual voltage available from a given zener diode

is temperature dependent, it is necessary to determine junc-

tiontemperatureunderanysetofoperatingconditionsinorder

to calculate its value. The following procedure is recom-

mended:

Lead Temperature, T , should be determined from:

T = θ

LA D

+ T .

2.4–60 V

isthelead-to-ambientthermalresistance(°C/W)andP is

the power dissipation. The value forθ willvaryanddepends

onthedevicemountingmethod.θ isgenerally30to40°C/W

for the various clips and tie points in common use and for

printed circuit board wiring.

62–200 V

0.6

0.2

0.4

0.8

The temperature of the lead can also be measured using a

thermocoupleplacedontheleadascloseaspossibletothetie

point. The thermal mass connected to the tie point is normally

large enough so that it will not significantly respond to heat

surges generated in the diode as a result of pulsed operation

once steady-state conditions are achieved. Using the mea-

L, LEAD LENGTH TO HEAT SINK (INCH)

Figure 2. Typical Thermal Resistance

1000

7000

5000

sured value of T , the junction temperature may be deter-

TYPICAL LEAKAGE CURRENT

AT 80% OF NOMINAL

BREAKDOWN VOLTAGE

mined by:

T = T + ∆T .

2000

1000

∆T is the increase in junction temperature above the lead

700

temperature and may be found from Figure 2 for dc power:

500

∆T = θ P .

JL JL D

200

For worst-case design, using expected limits of I , limits of

100

P andtheextremesofT (∆T )maybeestimated.Changesin

voltage, V , can then be found from:

∆V = θ T .

VZ J

, the zener voltage temperature coefficient, is found from

Figures 4 and 5.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zenerresistance. Forbestregulation, keepcurrentexcursions

as low as possible.

Surge limitations are given in Figure 7. They are lower than

would be expected by considering only junction temperature,

as current crowding effects cause temperatures to be ex-

tremely high in small spots, resulting in device degradation

should the limits of Figure 7 be exceeded.

0.7

0.5

+125°C

0.2

0.1

0.07

0.05

0.02

0.01

0.007

0.005

+25°C

0.002

0.001

12 13 14 15

V , NOMINAL ZENER VOLTAGE (VOLTS)

Figure 3. Typical Leakage Current

Motorola TVS/Zener Device Data

500 mW DO-35 Glass Data Sheet

6-98

123 4 5 6 7...42

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与1M120ZS5相关器件

型号	品牌	描述	获取价格	数据表
1M120ZS5RL	MOTOROLA	Zener Diode, 180V V(Z), 5%, 3W, Silicon, Unidirectional, DO-41	获取价格
1M120ZS5TA	MOTOROLA	180V, 3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
1M130Z	TSC	Glass Passivated Junction Silicon Zener Diode	获取价格
1M130Z	TRSYS	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE	获取价格
1M130ZS10	MOTOROLA	1.0 WATT SURMETIC 30 SILICON ZENER DIODES	获取价格
1M130ZS5	ETC	500 mW DO-35 Glass Zener Voltage Regulator Diodes	获取价格

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