Datasheet > 1H1_06

1H1_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	50K
描述
1.0A ULTRAFAST DIODE

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数据手册

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1H1_06 数据手册

ꢀ ꢀ

1.00

T_j= 25°C

Single phase half wave

Resistive or Inductive load

Pulse width = 300µs

0.75

0.50

0.25

1H5

1H1 - 1H4

1.0

0.1

0.01

100

1H6 - 1H8

100 125

150 175

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

T_j= 25°C

f = 1.0MHz

Pulse width

8.3 ms single half-sine-wave

(JEDEC method)

1H1 - 1H5

1H6 - 1H8

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60Hz

Fig. 3 Peak Forward Surge Current

Fig. 4 Typical Junction Capacitance

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

(-)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

-1.0A

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

1H1 – 1H8

2 of 4

123 4

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