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1E2(G) PDF预览

1E2(G)

更新时间: 2024-01-25 06:52:06
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 1005K
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1E2(G) 技术参数

Case Style:R-1IF(A):1
VRRM (V):100IFSM (A):30
VF (V):0.95@ IF (A):1
Maximum reverse current:5TRR(nS):35
class:Diodes

1E2(G) 数据手册

 浏览型号1E2(G)的Datasheet PDF文件第2页 
1E1G-1E6G  
Ultra Fast Rectifiers  
VOLTAGE RANGE: 50 --- 600 V  
CURRENT: 1.0 A  
R - 1  
Features  
Low cost  
Glass passivated junction  
Ultra fast switching for high efficiency  
Low reverse leakage current  
Low forward voltage drop  
High current capability  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Case:JEDEC R--1,molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.007 ounces,0.20 grams  
Mounting position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
1E1G  
1E2G  
1E3G 1E4G  
1E5G 1E6G UNITS  
Maximumrecurrent peakreverse voltage  
Max imum RMS v oltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
V
V
V
VRRM  
VRMS  
VDC  
Max imum DC bloc king v oltage  
100  
Maximumaverage forward rectified current  
1.0  
A
IF(AV)  
9.5mmlead length,  
Peak forw ard surge current  
8.3ms single half-sine-wave  
@T =75  
A
IFSM  
30.0  
A
V
superimposed on rated load @T =125  
J
Maximuminstantaneous forw ard voltage  
@1.0A  
0.95  
1.25  
1.7  
VF  
Maximumreverse current  
@T =25  
5.0  
A
A
IR  
at rated DCblocking voltage @T =150  
150.0  
35  
A
Maximum reverse recovery time (Note1)  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
17  
pF  
C
J
50  
R JA  
/ W  
θ
Operating junction temperature range  
- 55 ----- + 175  
- 55 ----- + 175  
T
J
Storage temperature range  
T
STG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3.Thermal resistance junction to ambient  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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