Datasheet > 1N5817

1N5817

更新时间： 2024-02-03 04:08:03

品牌	Logo	应用领域
统懋 - MOSPEC		/
页数	文件大小	规格书
2页	196K
描述
Schottky Barrier Rectifiers

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技术参数
数据手册

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1N5817 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.75	Base Number Matches：	1

1N5817 数据手册

MOSPEC

1N5817 thru 1N5819

Schottky Barrier Rectifiers

SCHOTTKY BARRIER

RECTIFIERS

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes.

1.0 AMPERES

20-40 VOLTS

＊Low Forward Voltage.

＊Low Switching noise.

＊High Current Capacity

＊Guarantee Reverse Avalanche.

＊Guard-Ring for Stress Protection.

＊Low Power Loss & High efficiency.

＊150℃ Operating Junction Temperature

＊Low Stored Charge Majority Carrier Conduction.

＊Plastic Material used Carries Underwriters Laboratory

Flammability Classification 94V-O

＊ESD: 8KV(Min.) Human-Body Model

DO-41

＊In compliance with EU RoHs 2002/95/EC directives

MAXIMUM RATINGS

Characteristic

Symbol 1N5817

1N5818

1N5819

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

RMS Reverse Voltage

VR_(RMS)

I_O

MILLIMETERS

DIM

MIN

2.00

25.40

4.10

0.70

MAX

2.70

---

Average Rectifier Forward Current

1.0

Non-Repetitive Peak Surge Current

(Surge applied at rate load conditions

half-wave, single phase,60Hz )

I_FSM

5.20

0.90

Operating and Storage Junction

Temperature Range

℃

T_J, T_STG

-65 to +150

ELECTRIAL CHARACTERISTICS

Characteristic

Symbol 1N5817

1N5818

1N5819

Unit

Maximum Instantaneous Forward Voltage

(I_F=1.0 Amp)

0.45

V_F

CASE---

0.55

0.87

0.60

0.90

0.75

Transfer molded

plastic

(I_F=3.0 Amp)

Maximum Instantaneous Reverse Current

(Rated DC Voltage, T_C= 25℃)

(Rated DC Voltage, T_C= 125℃)

0.5

I_R

OLARITY---

Cathode indicated

polarity band

Maximum Thermal Resistance Junction to

Case

R_θJC

^oC/W

Typical Junction Capacitance

C_P

(Reverse Voltage of 4 volts & f=1 MHz)

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1N5817/1	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
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1N5817/4H	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格