Datasheet > 1N5817

1N5817

更新时间： 2024-02-03 20:21:39

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
3页	137K
描述
1.0Amp Silicon Schottky Barrier Rectifiers

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技术参数
数据手册

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1N5817 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.75	Base Number Matches：	1

1N5817 数据手册

Spec. No. : C331LB

Issued Date : 2004.07.05

Revised Date :

CYStech Electronics Corp.

Page No. : 1/3

1.0Amp Silicon Schottky Barrier Rectifiers

1N581XLB Series

Features

• Low forward voltage drop

• High current capability

• High surge current capability

• High reliability

• Epitaxial construction

Mechanical Data

• Case: DO-41 Molded Plastic.

• Terminals: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed

• Polarity: Color band denotes cathode end.

• Epoxy: UL 94V-0 rate flame retardant

• Mounting position: Any

• Weight: 0.34 grams

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or

inductive load. For capacitive load, derate current by 20%.

Type Number

1N5817

1N5818

1N5819

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375”(9.5mm) lead length at Ta=90°C

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load(JEDEC method)

Maximum Instantaneous Forward Voltage @ 1.0A

Maximum DC Reverse Current at Rated DC

Blocking Voltage

0.45

0.55

0.6

(@Ta=25°C)

(@Ta=100°C)

Typical Junction Capacitance (Note 1)

Typical thermal resistance(Note 2)

110

℃

Operating Temperature Range Tj

Storage Temperature Range Tstg

-65 to +125

-65 to +150

°C

Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0Volts

2. Thermal resistance from junction to ambient, vertical PCB mounting, 0.5”(12.7mm) lead length.

1N581XLB

CYStek Product Specification

12 3

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