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1N5407 PDF预览

1N5407

更新时间: 2024-01-05 13:38:40
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 二极管
页数 文件大小 规格书
3页 137K
描述
3.0Amp Silicon Rectifiers

1N5407 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.07
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5407 数据手册

 浏览型号1N5407的Datasheet PDF文件第2页浏览型号1N5407的Datasheet PDF文件第3页 
Spec. No. : C344LA  
Issued Date : 2004.05.07  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/3  
3.0Amp Silicon Rectifiers  
1N540XLA Series  
Features  
Low forward voltage drop.  
High reliability  
High current capability  
High surge current capability  
Mechanical Data  
Case : Molded plastic DO-201AD  
Epoxy : UL94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208 guaranteed  
Polarity: Color band denotes cathode end.  
Mounting Position : Any.  
Weight: 1.1 gram  
Maximum Ratings and Electrical Characteristics  
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,  
resistive or inductive load. For capacitive load, derate current by 20%)  
Type  
Parameter  
Symbol  
Units  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
5400 5401 5402 5404 5406 5407 5408  
Repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VR  
50  
35  
50  
100  
70  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1000  
V
V
V
Maximum DC blocking voltage  
Maximum instantaneous  
VF  
0.95  
V
forward voltage, IF=3A  
Maximum average forward rectified  
current, 0.375”(9.5mm) lead length  
IF(AV)  
3
A
at TA=75  
Peak forward surge current @8.3ms  
single half sine wave superimposed  
on rated load (JEDEC method)  
Maximum DC reverse current, at  
rated DC blocking voltage  
IFSM  
200  
A
IR  
TJ=25  
5
µA  
µA  
50  
TJ=100  
Typical thermal resistance(Note 1)  
Typical junction capacitance (Note 2)  
Storage temperature  
Rth, JA  
CJ  
Tstg  
TJ  
30  
40  
/W  
pF  
-65 ~ +175  
-65 ~ +175  
Operating temperature  
Note : 1.Thermal resistance from junction to ambient, 0.375”(9.5mm) lead length.  
2. Measured at 1MHz and applied reverse voltage of 4VDC.  
1N540XLA  
CYStek Product Specification  

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