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1N5407/4H-E3 PDF预览

1N5407/4H-E3

更新时间： 2024-11-25 09:01:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 330K
描述
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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1N5407/4H-E3 数据手册

 浏览型号1N5407/4H-E3的Datasheet PDF文件第2页浏览型号1N5407/4H-E3的Datasheet PDF文件第3页浏览型号1N5407/4H-E3的Datasheet PDF文件第4页 
1N5400 thru 1N5408  
Vishay General Semiconductor  
General Purpose Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
50 V to 1000 V  
200 A  
5.0 µA  
VF  
1.2 V  
Tj max.  
150 °C  
DO-201AD  
Features  
Mechanical Data  
• Low forward voltage drop  
Case: DO-201AD, molded epoxy body  
• Low leakage current  
Epoxy meets UL-94V-0 Flammability rating  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated (E3 Suffix) leads,  
solderable per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application.  
(Note: Theses devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 Unit  
Maximum repetitive peak  
reverse voltage  
V
50  
100  
200  
300  
400  
500  
600  
800  
1000  
V
RRM  
Maximum RMS voltage  
V
35  
50  
70  
140  
200  
210  
300  
280  
400  
3.0  
350  
500  
420  
600  
560  
800  
700  
V
V
A
RMS  
Maximum DC blocking voltage  
V
100  
1000  
DC  
Maximum average forward  
I
F(AV)  
rectified current 0.5" (12.5 mm)  
lead length at T = 105 °C  
L
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
I
200  
500  
A
FSM  
Maximum full load reverse  
current, full cycle average 0.5"  
(12.5 mm) lead length at  
I
µA  
R(AV)  
T = 105 °C  
L
Operating junction and storage T ,T  
J
- 50 to + 150  
°C  
STG  
temperature range  
Document Number 88516  
25-Aug-05  
www.vishay.com  
1
1234

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与1N5407/4H-E3相关器件

型号 品牌 获取价格 描述 数据表
1N5407/51 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/51-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/53 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/53-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/54 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/54-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/56-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/58 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5407/58-E3 VISHAY

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 		DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5407/60 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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