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1N1191 PDF预览

1N1191

更新时间: 2024-02-20 07:00:11
品牌 Logo 应用领域
NJSEMI 整流二极管
页数 文件大小 规格书
1页 129K
描述
PEAK REPETITIVE REVERSE VOLTAGE DC BLOCKING VOLTAGE

1N1191 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.52应用:POWER
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:DO-5
JESD-30 代码:O-MUPM-D1元件数量:1
相数:1端子数量:1
最大输出电流:18 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
Base Number Matches:1

1N1191 数据手册

  

与1N1191相关器件

型号 品牌 获取价格 描述 数据表
1N1191A MICROSEMI

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SILICON POWER RECTIFIER
1N1191A NJSEMI

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Silicon Power Rectifiers
1N1191AE3 MICROSEMI

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Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PI
1N1191AR MICROSEMI

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Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PI
1N1191ARE3 MICROSEMI

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Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PI
1N1191E3 MICROSEMI

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Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PI
1N1191R MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PI
1N1191RE3 MICROSEMI

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Rectifier Diode, 1 Phase, 1 Element, 40A, 50V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PI
1N1192 NJSEMI

获取价格

PEAK REPETITIVE REVERSE VOLTAGE DC BLOCKING VOLTAGE
1N1192 MICROSEMI

获取价格

SILICON POWER RECTIFIER