Datasheet > 1800PT20D0

1800PT20D0

更新时间： 2022-02-26 10:13:50

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尼尔 - NELLSEMI		/
页数	文件大小	规格书
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描述
Phase Control Thyristors

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1800PT20D0 数据手册

RoHS

1800PT Series

Nell High Power Products

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

1800(720)

55(85)

UNIT

ºC

Maximum average current

at heatsink temperature

180° conduction, half sine wave

I_T(AV)

double side (single side) cooled

I_T(RMS)

DC at 25°C heatsink temperature double side cooled

Maximum RMS on-state current

3300

35000

36645

29400

30782

6125

5573

4322

3932

61250

0.90

t = 10ms

No voltage

reapplied

t = 8.3ms

Maximum peak, one cycle

non-reptitive surge current

I_TSM

t = 10ms

100%V_RRM

reapplied

t = 8.3ms

Sinusoidal half wave,

initial T_J= T_Jmaximum

t = 10ms

No voltage

reapplied

t = 8.3ms

kA s

Maximum l²t for fusing

I t

t = 10ms

100%V_RRM

reapplied

t = 8.3ms

kA √s

I √t

t = 0.1 to 10 ms, no voltage reapplied

Maximum l²√t for fusing

(16.7% x π x l_T(AV)< I < π x l_T(AV)),T_J=T_Jmaximum

(I > π x l_T(AV)),T_J=T_Jmaximum

(16.7% x π x l_T(AV)< I < π x l_T(AV)),T_J=T_Jmaximum

(I > π x l_T(AV)),T_J=T_Jmaximum

Low level value of threshold voltage

High level value of threshold voltage

Low level value on-state slope resistance

High level value on-state slope resistance

Maximum on-state voltage

T(TO)1

T(TO)2

1.00

r_t1

r_t2

V_TM

l_H

0.17

mΩ

0.16

l_pk=4000A,T_J=T_Jmaximum_,t_p=10 ms sine pulse

1.60

Maximum holding current

300

T_J= 25°C, anode supply 12V resistive load

Typical latching current

l_L

500

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNIT

Gate drive 20V, 20Ω, t_r≤ 1µs

Maximum non-repetitive rate of rise

of turned-on current

A/µs

dl/dt

1000

T_J=T_Jmaximum, anode voltage ≤ 80% V_DRM

Gate current 1A, dl_g/dt =1 A/µs

V_d= 0.67 V_DRM, T_J= 25°C

Typical delay time

t_d

1.90

µs

l_TM= 550A, T_J=T_Jmaximum, dl/dt = 40A/µs.

t_q

Typical turn-off time

200

V_R= 50V, dV/dt = 20 V/µs, gate 0 V 100Ω, tp = 500µs

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNIT

Maximum critical rate of rise of

off-state voltage

T_J=T_Jmaximum linear to 80% rated V_DRM

V/µs

dV/dt

500

Maximum peak reverse and

off-state leakage current

l_RRM,

l_DRM,

T_J=T_Jmaximum, rated V_DRM/V_RRMapplied

100

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