16M0
Phone: 617-924-9280
Fax: 617-924-1235
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
DIE SPECIFICATION
60V 300mA
MONOLITHIC DIODE ARRAY
FEATURES:
·
·
·
·
16 DIODE CORE DRIVER
trr < 20 ns
.054"
RUGGED AIR-ISOLATED CONSTRUCTION
LOW REVERSE LEAKAGE CURRENT
J
J
J
J
Absolute Maximum Ratings:
A
C
.060"
Symbol
Parameter
Limit
Unit
A
VBR(R) *1 *2 Reverse Breakdown Voltage
60
Vdc
J
J
J
J
IO
*1
Continuous Forward Current
*1 Peak Surge Current (tp= 1/120 s)
Operating Junction Temperature Range
Storage Temperature Range
300
500
-65 to +150 °C
-65 to +200 °C
mAdc
mAdc
IFSM
Top
Tstg
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified
Symbol Parameter
Conditions
Min
Max Unit
BV1
Vf1
Vf2
IR1
Ct
Breakdown Voltage
Forward Voltage
Forward Voltage
Reverse Current
Capacitance (pin to pin)
Forward Recovery Time IF = 500mAdc
IR = 10uAdc
60
IF = 100mAdc *1
IF = 500mAdc *1
VR = 40 Vdc
1
Vdc
1.5 Vdc
0.1 uAdc
8.0 pF
40 ns
VR = 0 Vdc; f = 1 MHz
tfr
trr
Reverse Recovery Time IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms
20 ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Packaging Options:
Processing Options:
W: Wafer (100% probed) U: Wafer (sample probed)
Standard: Capable of JANTXV application (No Suffix)
Suffix C: Commercial
D: Chip (Waffle Pack)
B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other
Suffix S: Capable of S-Level equivalent applications
ORDERING INFORMATION
Metallization Options:
PART #: 16M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Standard: Al Top
/ Au Backside (No Dash #)
Sertech reserves the right to make changes to any product design, specification or other information at any time without prior
notice.
MSC1024.PDF Rev - 12/3/98