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15C01S

更新时间： 2024-01-25 23:16:09
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管开关光电二极管
页数 文件大小 规格书
4页 33K
描述
Low-Frequency General-Purpose Amplifier Applications

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15C01S 技术参数

是否无铅： 不含铅生命周期：Active
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：2 weeks
风险等级：5.77JESD-609代码：e6
湿度敏感等级：1端子面层：Tin/Bismuth (Sn/Bi)

15C01S 数据手册

 浏览型号15C01S的Datasheet PDF文件第2页浏览型号15C01S的Datasheet PDF文件第3页浏览型号15C01S的Datasheet PDF文件第4页 
Ordering number : ENN7506  
NPN Epitaxial Planar Silicon Transistor  
15C01S  
Low-Frequency  
General-Purpose Amplifier Applications  
Applications  
Package Dimensions  
unit : mm  
•
Low-frequency Amplifier, muting circuit.  
2106A  
[15C01S]  
Features  
0.75  
0.6  
•
Large current capacitance.  
0.3  
•
Low collector-to-emitter saturation voltage (resistance).  
3
R
(sat) typ.=0.58Ω [I =0.7A, I =35mA].  
0~0.1  
CE  
C
B
•
Ultrasmall package facilitates miniaturization in end  
2
1
products.  
• Small ON-resistance (Ron).  
0.1  
0.2  
0.5 0.5  
1.6  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : SMCP  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
20  
15  
5
V
V
I
600  
1.2  
mA  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
CP  
P
Mounted on a glass epoxy board (20✕30✕1.6mm)  
200  
mW  
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
0.1  
I
V
V
V
V
V
=15V, I =0  
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
Emitter Cutoff Current  
DC Current Gain  
I
=4V, I =0  
0.1  
EBO  
C
h
FE  
=2V, I =10mA  
300  
800  
C
Gain-Bandwidth Product  
Output Capacitance  
f
T
=2V, I =50mA  
C
330  
3.2  
MHz  
pF  
Cob  
=10V, f=1MHz  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Marking : YP  
V
V
(sat)  
I
=200mA, I =10mA  
150  
0.9  
300  
1.2  
mV  
V
CE  
C
B
(sat)  
I
C
=200mA, I =10mA  
BE  
B
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O3003 TS IM TA-100653 No.7506-1/4  
1234

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