Datasheet > 13003CDHL-T92-B

13003CDHL-T92-B

更新时间： 2022-02-26 09:39:47

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描述
NPN SILICON POWER TRANSISTOR

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数据手册

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13003CDHL-T92-B 数据手册

13003CDH

Preliminary

NPN SILICON TRANSISTOR



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified.)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS (Note)

Collector-Emitter Sustaining Voltage

V_CEO(SUS)I_C=10mA , I_B=0

400

T_C=25°C

_CEO=Rated Value,

_BE(OFF)=1.5 V

Collector Cutoff Current

I_CEO

I_EBO

T_C=100°C

Emitter Cutoff Current

V_EB=9V, I_C=0

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Fig.5

See Fig.6

Clamped Inductive SOA with base reverse biased

ON CHARACTERISTICS (Note)

RB_SOA

h_FE1

h_FE2

I_C=0.5A, V_CE=5V

DC Current Gain

I_C=1A, V_CE=5V

I_C=0.5A, I_B=0.1A

0.5

I_C=1A, I_B=0.25A

Collector-Emitter Saturation Voltage

V_CE(SAT)

I_C=1.5A, I_B=0.5A

I_C=1A, I_B=0.25A, T_C=100°C

I_C=0.5A, I_B=0.1A

Base-Emitter Saturation Voltage

V_BE(SAT)

I_C=1A, I_B=0.25A

1.2

1.1

I_C=1A, I_B=0.25A, T_C=100°C

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

Output Capacitance

f_T

I_C=100mA, V_CE=10V, f=1MHz

V_CB=10V, I_E=0, f=0.1MHz

MHz

C_OB

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

t_D

t_R

t_S

t_F

0.05 0.1 μs

Rise Time

0.5

μs

V_CC=125V, I_C=1A, _B1=I_B2=0.2A,

t_P=25μs, Duty Cycle≤1%

Storage Time

Fall Time

0.4 0.7 μs

Inductive Load, Clamped (Table 1)

Storage Time

t_STG

t_C

1.7

μs

I_C=1A, V_CLAMP=300V, I_B1=0.2A,

Crossover Time

0.29 0.75 μs

V_BE(OFF)=5V_DC, T_C=100°C

Fall Time

t_F

0.15

μs

Diode Forward Voltage

Note: Pulse Test: PW=300μs, Duty Cycle≤2%

V_F

IF=0.5A

1.5

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R223-022.a

www.unisonic.com.tw

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